Spatial Mapping of Thermal Boundary Conductance at Metal-Molybdenum Diselenide Interfaces

David B. Brown; Wenqing Shen; Xufan Li; Kai Xiao; David B. Geohegan; Satish Kumar

doi:10.1021/acsami.8b22702

Spatial Mapping of Thermal Boundary Conductance at Metal-Molybdenum Diselenide Interfaces

David B. Brown, Wenqing Shen, Xufan Li, Kai Xiao, David B. Geohegan, Satish Kumar

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Improving the thermal transport across interfaces is a necessary consideration for micro- and nanoelectronic devices and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. Two-dimensional transition-metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties of these interfaces are significantly less explored irrespective of their high importance in their electronic devices. We isolate individual islands of MoSe ₂ grown by chemical vapor deposition using photolithography and correlate the 2D variation of TBC with optical microscope images of the MoSe ₂ islands. We measure the 2D spatial variation of the TBC at metal-MoSe ₂ -SiO ₂ interfaces using a modified time-domain thermoreflectance (TDTR) technique, which requires much less time than full TDTR scans. The thermoreflectance signal at a single probe delay time is compared with a correlation curve, which enables us to estimate the change in the signal with respect to the TBC at the metal-MoSe ₂ -SiO ₂ interface as opposed to recording the decay of the thermoreflectance signal over delay times of several nanoseconds. The results show a higher TBC across the Ti-MoSe ₂ -SiO ₂ interface compared to Al-MoSe ₂ -SiO ₂ . An image-clustering method is developed to differentiate the TBC for different numbers of MoSe ₂ layers, which reveals that the TBC in single-layer regions is higher than that in the bilayer. We perform traditional TDTR measurements over a range of delay times and verify that TBC is higher at the Ti-MoSe ₂ -SiO ₂ interface compared to Al-MoSe ₂ -SiO ₂ , highlighting the importance of the choice of metal for heat dissipation at electrical contacts in TMD devices.

Original language	English
Pages (from-to)	14418-14426
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	11
Issue number	15
DOIs	https://doi.org/10.1021/acsami.8b22702
State	Published - Apr 17 2019

Funding

The authors would like to thank Ben Hollerbach at the Georgia Tech Institute of Electronics and Nanotechnology (IEN) and Luke Yates for assistance with sample patterning and TDTR mapping, respectively. Synthesis of the 2D materials was supported by the Materials Science and Engineering Division, Office of Basic Energy Sciences, U.S. Department of Energy.

Keywords

interfacial bonding
metal contacts
molybdenum diselenide
thermal boundary conductance
time-domain thermoreflectance
transition-metal dichalcogenides
two-dimensional materials

Access to Document

10.1021/acsami.8b22702

Cite this

@article{af0ce7e3f26b42b4a6d00f5f9fffad5c,

title = "Spatial Mapping of Thermal Boundary Conductance at Metal-Molybdenum Diselenide Interfaces",

abstract = " Improving the thermal transport across interfaces is a necessary consideration for micro- and nanoelectronic devices and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. Two-dimensional transition-metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties of these interfaces are significantly less explored irrespective of their high importance in their electronic devices. We isolate individual islands of MoSe 2 grown by chemical vapor deposition using photolithography and correlate the 2D variation of TBC with optical microscope images of the MoSe 2 islands. We measure the 2D spatial variation of the TBC at metal-MoSe 2 -SiO 2 interfaces using a modified time-domain thermoreflectance (TDTR) technique, which requires much less time than full TDTR scans. The thermoreflectance signal at a single probe delay time is compared with a correlation curve, which enables us to estimate the change in the signal with respect to the TBC at the metal-MoSe 2 -SiO 2 interface as opposed to recording the decay of the thermoreflectance signal over delay times of several nanoseconds. The results show a higher TBC across the Ti-MoSe 2 -SiO 2 interface compared to Al-MoSe 2 -SiO 2 . An image-clustering method is developed to differentiate the TBC for different numbers of MoSe 2 layers, which reveals that the TBC in single-layer regions is higher than that in the bilayer. We perform traditional TDTR measurements over a range of delay times and verify that TBC is higher at the Ti-MoSe 2 -SiO 2 interface compared to Al-MoSe 2 -SiO 2 , highlighting the importance of the choice of metal for heat dissipation at electrical contacts in TMD devices.",

keywords = "interfacial bonding, metal contacts, molybdenum diselenide, thermal boundary conductance, time-domain thermoreflectance, transition-metal dichalcogenides, two-dimensional materials",

author = "Brown, {David B.} and Wenqing Shen and Xufan Li and Kai Xiao and Geohegan, {David B.} and Satish Kumar",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = apr,

day = "17",

doi = "10.1021/acsami.8b22702",

language = "English",

volume = "11",

pages = "14418--14426",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "15",

}

TY - JOUR

T1 - Spatial Mapping of Thermal Boundary Conductance at Metal-Molybdenum Diselenide Interfaces

AU - Brown, David B.

AU - Shen, Wenqing

AU - Li, Xufan

AU - Xiao, Kai

AU - Geohegan, David B.

AU - Kumar, Satish

PY - 2019/4/17

Y1 - 2019/4/17

N2 - Improving the thermal transport across interfaces is a necessary consideration for micro- and nanoelectronic devices and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. Two-dimensional transition-metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties of these interfaces are significantly less explored irrespective of their high importance in their electronic devices. We isolate individual islands of MoSe 2 grown by chemical vapor deposition using photolithography and correlate the 2D variation of TBC with optical microscope images of the MoSe 2 islands. We measure the 2D spatial variation of the TBC at metal-MoSe 2 -SiO 2 interfaces using a modified time-domain thermoreflectance (TDTR) technique, which requires much less time than full TDTR scans. The thermoreflectance signal at a single probe delay time is compared with a correlation curve, which enables us to estimate the change in the signal with respect to the TBC at the metal-MoSe 2 -SiO 2 interface as opposed to recording the decay of the thermoreflectance signal over delay times of several nanoseconds. The results show a higher TBC across the Ti-MoSe 2 -SiO 2 interface compared to Al-MoSe 2 -SiO 2 . An image-clustering method is developed to differentiate the TBC for different numbers of MoSe 2 layers, which reveals that the TBC in single-layer regions is higher than that in the bilayer. We perform traditional TDTR measurements over a range of delay times and verify that TBC is higher at the Ti-MoSe 2 -SiO 2 interface compared to Al-MoSe 2 -SiO 2 , highlighting the importance of the choice of metal for heat dissipation at electrical contacts in TMD devices.

AB - Improving the thermal transport across interfaces is a necessary consideration for micro- and nanoelectronic devices and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. Two-dimensional transition-metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties of these interfaces are significantly less explored irrespective of their high importance in their electronic devices. We isolate individual islands of MoSe 2 grown by chemical vapor deposition using photolithography and correlate the 2D variation of TBC with optical microscope images of the MoSe 2 islands. We measure the 2D spatial variation of the TBC at metal-MoSe 2 -SiO 2 interfaces using a modified time-domain thermoreflectance (TDTR) technique, which requires much less time than full TDTR scans. The thermoreflectance signal at a single probe delay time is compared with a correlation curve, which enables us to estimate the change in the signal with respect to the TBC at the metal-MoSe 2 -SiO 2 interface as opposed to recording the decay of the thermoreflectance signal over delay times of several nanoseconds. The results show a higher TBC across the Ti-MoSe 2 -SiO 2 interface compared to Al-MoSe 2 -SiO 2 . An image-clustering method is developed to differentiate the TBC for different numbers of MoSe 2 layers, which reveals that the TBC in single-layer regions is higher than that in the bilayer. We perform traditional TDTR measurements over a range of delay times and verify that TBC is higher at the Ti-MoSe 2 -SiO 2 interface compared to Al-MoSe 2 -SiO 2 , highlighting the importance of the choice of metal for heat dissipation at electrical contacts in TMD devices.

KW - interfacial bonding

KW - metal contacts

KW - molybdenum diselenide

KW - thermal boundary conductance

KW - time-domain thermoreflectance

KW - transition-metal dichalcogenides

KW - two-dimensional materials

UR - http://www.scopus.com/inward/record.url?scp=85064606969&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b22702

DO - 10.1021/acsami.8b22702

M3 - Article

C2 - 30896146

AN - SCOPUS:85064606969

SN - 1944-8244

VL - 11

SP - 14418

EP - 14426

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 15

ER -

Spatial Mapping of Thermal Boundary Conductance at Metal-Molybdenum Diselenide Interfaces

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this