Some details of the electronic structure of tin oxide films

We present experimental results of electronic structure investigations of SnO₂ films by X-ray emission spectroscopy and X-ray photoelectron spectroscopy methods wherein X-ray O K_α emission spectra for these materials are reported for the first time. The O 2p electron band shifts toward the upper edge of the valence band when oxygen vacancies increase, but, at the same time, the distance on the binding energy scale from the O 2p band centroid to the Fermi level remains constant. The O 2p valence electron band is broader on the higher binding energy side for oxides having more oxygen vacancies.