Solution processing of lanthanum zirconate films as single buffer layers for high Ic YBCO coated conductors

Srivatsan Sathyamurthy; M. Parans Paranthaman; Hong Ying Zhai; Sukill Kang; Hans M. Christen; Claudia Cantoni; Amit Goyal; Patrick M. Martin

doi:10.1109/TASC.2003.811940

Solution processing of lanthanum zirconate films as single buffer layers for high I_c YBCO coated conductors

Srivatsan Sathyamurthy
, M. Parans Paranthaman
, Hong Ying Zhai
, Sukill Kang
, Hans M. Christen
, Claudia Cantoni
, Amit Goyal
, Patrick M. Martin

Nanomaterials Chemistry Group

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

Sol-gel processing of lanthanum zirconate (La₂Zr₂O₇ - referred to as LZO) buffer layers on biaxially textured nickel and Ni-3 at.% W alloy substrates using spin coating and a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. This coating and annealing process was repeated to get the desired buffer layer thickness. On these all-solution single buffer layer substrates, YBCO films were grown using pulsed laser deposition process. Critical current density about 2 MA/cm² at 77 K and self-field has been obtained on these samples. Continuous processing of these substrates and processing of high I_c YBCO films on them will be discussed.

Original language	English
Pages (from-to)	2658-2660
Number of pages	3
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2 III
DOIs	https://doi.org/10.1109/TASC.2003.811940
State	Published - Jun 2003
Event	2002 Applied Superconductivity Conference - Houston, TX, United States Duration: Aug 4 2002 → Aug 9 2002

Funding

Manuscript received August 6, 2002. The U.S. DOE, Division of Materials Sciences, Office of Science and Office of Power Technologies-Superconductivity Program, and Office of Energy Efficiency and Renewable Energy sponsored this research. This research was performed at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. DOE under Contract DE-AC05-00OR22725.

Keywords

All-solution buffer layers
Coated conductors
Lanthanum zirconate
Single buffer layer

Access to Document

10.1109/TASC.2003.811940

Cite this

@article{180981037ee7464e8d7a4bbca9321207,

title = "Solution processing of lanthanum zirconate films as single buffer layers for high Ic YBCO coated conductors",

abstract = "Sol-gel processing of lanthanum zirconate (La2Zr2O7 - referred to as LZO) buffer layers on biaxially textured nickel and Ni-3 at.\% W alloy substrates using spin coating and a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. This coating and annealing process was repeated to get the desired buffer layer thickness. On these all-solution single buffer layer substrates, YBCO films were grown using pulsed laser deposition process. Critical current density about 2 MA/cm2 at 77 K and self-field has been obtained on these samples. Continuous processing of these substrates and processing of high Ic YBCO films on them will be discussed.",

keywords = "All-solution buffer layers, Coated conductors, Lanthanum zirconate, Single buffer layer",

author = "Srivatsan Sathyamurthy and Paranthaman, \{M. Parans\} and Zhai, \{Hong Ying\} and Sukill Kang and Christen, \{Hans M.\} and Claudia Cantoni and Amit Goyal and Martin, \{Patrick M.\}",

year = "2003",

month = jun,

doi = "10.1109/TASC.2003.811940",

language = "English",

volume = "13",

pages = "2658--2660",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2 III",

note = "2002 Applied Superconductivity Conference ; Conference date: 04-08-2002 Through 09-08-2002",

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TY - JOUR

T1 - Solution processing of lanthanum zirconate films as single buffer layers for high Ic YBCO coated conductors

AU - Sathyamurthy, Srivatsan

AU - Paranthaman, M. Parans

AU - Zhai, Hong Ying

AU - Kang, Sukill

AU - Christen, Hans M.

AU - Cantoni, Claudia

AU - Goyal, Amit

AU - Martin, Patrick M.

PY - 2003/6

Y1 - 2003/6

N2 - Sol-gel processing of lanthanum zirconate (La2Zr2O7 - referred to as LZO) buffer layers on biaxially textured nickel and Ni-3 at.% W alloy substrates using spin coating and a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. This coating and annealing process was repeated to get the desired buffer layer thickness. On these all-solution single buffer layer substrates, YBCO films were grown using pulsed laser deposition process. Critical current density about 2 MA/cm2 at 77 K and self-field has been obtained on these samples. Continuous processing of these substrates and processing of high Ic YBCO films on them will be discussed.

AB - Sol-gel processing of lanthanum zirconate (La2Zr2O7 - referred to as LZO) buffer layers on biaxially textured nickel and Ni-3 at.% W alloy substrates using spin coating and a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. This coating and annealing process was repeated to get the desired buffer layer thickness. On these all-solution single buffer layer substrates, YBCO films were grown using pulsed laser deposition process. Critical current density about 2 MA/cm2 at 77 K and self-field has been obtained on these samples. Continuous processing of these substrates and processing of high Ic YBCO films on them will be discussed.

KW - All-solution buffer layers

KW - Coated conductors

KW - Lanthanum zirconate

KW - Single buffer layer

UR - https://www.scopus.com/pages/publications/0041474623

U2 - 10.1109/TASC.2003.811940

DO - 10.1109/TASC.2003.811940

M3 - Conference article

AN - SCOPUS:0041474623

SN - 1051-8223

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SP - 2658

EP - 2660

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 III

T2 - 2002 Applied Superconductivity Conference

Y2 - 4 August 2002 through 9 August 2002

ER -