Solution processing of lanthanum zirconate films as single buffer layers for high Ic YBCO coated conductors

Srivatsan Sathyamurthy, M. Parans Paranthaman, Hong Ying Zhai, Sukill Kang, Hans M. Christen, Claudia Cantoni, Amit Goyal, Patrick M. Martin

Research output: Contribution to journalConference articlepeer-review

26 Scopus citations

Abstract

Sol-gel processing of lanthanum zirconate (La2Zr2O7 - referred to as LZO) buffer layers on biaxially textured nickel and Ni-3 at.% W alloy substrates using spin coating and a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. This coating and annealing process was repeated to get the desired buffer layer thickness. On these all-solution single buffer layer substrates, YBCO films were grown using pulsed laser deposition process. Critical current density about 2 MA/cm2 at 77 K and self-field has been obtained on these samples. Continuous processing of these substrates and processing of high Ic YBCO films on them will be discussed.

Original languageEnglish
Pages (from-to)2658-2660
Number of pages3
JournalIEEE Transactions on Applied Superconductivity
Volume13
Issue number2 III
DOIs
StatePublished - Jun 2003
Event2002 Applied Superconductivity Conference - Houston, TX, United States
Duration: Aug 4 2002Aug 9 2002

Funding

Manuscript received August 6, 2002. The U.S. DOE, Division of Materials Sciences, Office of Science and Office of Power Technologies-Superconductivity Program, and Office of Energy Efficiency and Renewable Energy sponsored this research. This research was performed at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. DOE under Contract DE-AC05-00OR22725.

Keywords

  • All-solution buffer layers
  • Coated conductors
  • Lanthanum zirconate
  • Single buffer layer

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