Abstract
Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current-voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 1016 ion/cm2 at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.
| Original language | English |
|---|---|
| Pages (from-to) | 2816-2821 |
| Number of pages | 6 |
| Journal | Nano Letters |
| Volume | 23 |
| Issue number | 7 |
| DOIs | |
| State | Published - Apr 12 2023 |
| Externally published | Yes |
Funding
K.-Y.C. and J.B.A. gratefully acknowledge support provided by the University of Wisconsin - Madison Office of the Vice Chancellor for Research an Graduate Education for the financial support through the Fall Research Competition. P.K.T. and K.M. gratefully acknowledge the Energy and Environment Science and Technology and Nuclear Science and Technology at the Idaho National Laboratory, USA, for their support; their institutional approval number is INL/JOU-22-70364. K.M. also wants to thank Oak Ridge National Laboratory, USA, for their support.
Keywords
- Schottky diodes
- harsh environments
- nanowires
- silicon carbide
- solution processed