Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors

Patrick B. Shea; Lisa R. Pattison; Manami Kawano; Charlene Chen; Jihua Chen; Pierre Petroff; David C. Martin; Hiroko Yamada; Noboru Ono; Jerzy Kanicki

doi:10.1016/j.synthmet.2007.01.013

Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors

Patrick B. Shea, Lisa R. Pattison, Manami Kawano, Charlene Chen, Jihua Chen, Pierre Petroff, David C. Martin, Hiroko Yamada, Noboru Ono, Jerzy Kanicki

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The demonstration of organic thin-film field-effect transistors (OFETs) using a solution-processable form of the organometallic molecule copper tetrabenzoporphyrin (CuTBP) is reported. A soluble precursor was spun-cast into an amorphous, insulating thin-film, and thermally annealed at 165 °C for 30 min into a polycrystalline organic semiconductor. Absorbance spectroscopy displayed characteristics of porphyrin macrocycles. Microscopy reveals the formation of domains comprising aligned nanorod aggregates with dimensions of 55 nm wide, 300 nm long, and 100 nm tall on the gate insulator surface. OFETs demonstrated field-effect mobilities typically on the order of 0.1 cm²/V s, threshold voltages around 5 V, subthreshold slopes around 4 V/dec, and ON-/OFF-current ratios near 10⁴.

Original language	English
Pages (from-to)	190-197
Number of pages	8
Journal	Synthetic Metals
Volume	157
Issue number	4-5
DOIs	https://doi.org/10.1016/j.synthmet.2007.01.013
State	Published - Mar 2007
Externally published	Yes

Keywords

Atomic force microscopy
Metallotetrabenzoporphyrins
Optical absorption
Organic field-effect transistors
Solution processing
X-ray diffraction

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10.1016/j.synthmet.2007.01.013

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@article{c3e3a97837ce4891afc45ccd07580a62,

title = "Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors",

abstract = "The demonstration of organic thin-film field-effect transistors (OFETs) using a solution-processable form of the organometallic molecule copper tetrabenzoporphyrin (CuTBP) is reported. A soluble precursor was spun-cast into an amorphous, insulating thin-film, and thermally annealed at 165 °C for 30 min into a polycrystalline organic semiconductor. Absorbance spectroscopy displayed characteristics of porphyrin macrocycles. Microscopy reveals the formation of domains comprising aligned nanorod aggregates with dimensions of 55 nm wide, 300 nm long, and 100 nm tall on the gate insulator surface. OFETs demonstrated field-effect mobilities typically on the order of 0.1 cm2/V s, threshold voltages around 5 V, subthreshold slopes around 4 V/dec, and ON-/OFF-current ratios near 104.",

keywords = "Atomic force microscopy, Metallotetrabenzoporphyrins, Optical absorption, Organic field-effect transistors, Solution processing, X-ray diffraction",

author = "Shea, {Patrick B.} and Pattison, {Lisa R.} and Manami Kawano and Charlene Chen and Jihua Chen and Pierre Petroff and Martin, {David C.} and Hiroko Yamada and Noboru Ono and Jerzy Kanicki",

year = "2007",

month = mar,

doi = "10.1016/j.synthmet.2007.01.013",

language = "English",

volume = "157",

pages = "190--197",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier",

number = "4-5",

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T1 - Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors

AU - Shea, Patrick B.

AU - Pattison, Lisa R.

AU - Kawano, Manami

AU - Chen, Charlene

AU - Chen, Jihua

AU - Petroff, Pierre

AU - Martin, David C.

AU - Yamada, Hiroko

AU - Ono, Noboru

AU - Kanicki, Jerzy

PY - 2007/3

Y1 - 2007/3

N2 - The demonstration of organic thin-film field-effect transistors (OFETs) using a solution-processable form of the organometallic molecule copper tetrabenzoporphyrin (CuTBP) is reported. A soluble precursor was spun-cast into an amorphous, insulating thin-film, and thermally annealed at 165 °C for 30 min into a polycrystalline organic semiconductor. Absorbance spectroscopy displayed characteristics of porphyrin macrocycles. Microscopy reveals the formation of domains comprising aligned nanorod aggregates with dimensions of 55 nm wide, 300 nm long, and 100 nm tall on the gate insulator surface. OFETs demonstrated field-effect mobilities typically on the order of 0.1 cm2/V s, threshold voltages around 5 V, subthreshold slopes around 4 V/dec, and ON-/OFF-current ratios near 104.

AB - The demonstration of organic thin-film field-effect transistors (OFETs) using a solution-processable form of the organometallic molecule copper tetrabenzoporphyrin (CuTBP) is reported. A soluble precursor was spun-cast into an amorphous, insulating thin-film, and thermally annealed at 165 °C for 30 min into a polycrystalline organic semiconductor. Absorbance spectroscopy displayed characteristics of porphyrin macrocycles. Microscopy reveals the formation of domains comprising aligned nanorod aggregates with dimensions of 55 nm wide, 300 nm long, and 100 nm tall on the gate insulator surface. OFETs demonstrated field-effect mobilities typically on the order of 0.1 cm2/V s, threshold voltages around 5 V, subthreshold slopes around 4 V/dec, and ON-/OFF-current ratios near 104.

KW - Atomic force microscopy

KW - Metallotetrabenzoporphyrins

KW - Optical absorption

KW - Organic field-effect transistors

KW - Solution processing

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=34248218467&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2007.01.013

DO - 10.1016/j.synthmet.2007.01.013

M3 - Article

AN - SCOPUS:34248218467

SN - 0379-6779

VL - 157

SP - 190

EP - 197

JO - Synthetic Metals

JF - Synthetic Metals

IS - 4-5

ER -

Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors

Abstract

Keywords

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