Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits

Sumukh Purohit; N. Ganesh; K. S. Narayan

doi:10.1109/JFLEX.2023.3270129

Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits

Sumukh Purohit, N. Ganesh, K. S. Narayan

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3 Scopus citations

Abstract

We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of ≈ 100μs. The achievable channel length of ≈ 2.5μm for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.

Original language	English
Pages (from-to)	429-433
Number of pages	5
Journal	IEEE Journal on Flexible Electronics
Volume	2
Issue number	5
DOIs	https://doi.org/10.1109/JFLEX.2023.3270129
State	Published - Sep 1 2023

Keywords

Complimentary metal oxide semiconductor (CMOS) integrated circuits
flexible printed circuits
hybrid materials
thin film circuits

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10.1109/JFLEX.2023.3270129

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title = "Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits",

abstract = "We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of ≈ 100μs. The achievable channel length of ≈ 2.5μm for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.",

keywords = "Complimentary metal oxide semiconductor (CMOS) integrated circuits, flexible printed circuits, hybrid materials, thin film circuits",

author = "Sumukh Purohit and N. Ganesh and Narayan, \{K. S.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2023",

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doi = "10.1109/JFLEX.2023.3270129",

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T1 - Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits

AU - Purohit, Sumukh

AU - Ganesh, N.

AU - Narayan, K. S.

PY - 2023/9/1

Y1 - 2023/9/1

N2 - We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of ≈ 100μs. The achievable channel length of ≈ 2.5μm for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.

AB - We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of ≈ 100μs. The achievable channel length of ≈ 2.5μm for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.

KW - Complimentary metal oxide semiconductor (CMOS) integrated circuits

KW - flexible printed circuits

KW - hybrid materials

KW - thin film circuits

UR - https://www.scopus.com/pages/publications/85179622684

U2 - 10.1109/JFLEX.2023.3270129

DO - 10.1109/JFLEX.2023.3270129

M3 - Article

AN - SCOPUS:85179622684

SN - 2768-167X

VL - 2

SP - 429

EP - 433

JO - IEEE Journal on Flexible Electronics

JF - IEEE Journal on Flexible Electronics

IS - 5

ER -

Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits

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