Abstract
We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of ≈ 100μs. The achievable channel length of ≈ 2.5μm for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.
Original language | English |
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Pages (from-to) | 429-433 |
Number of pages | 5 |
Journal | IEEE Journal on Flexible Electronics |
Volume | 2 |
Issue number | 5 |
DOIs | |
State | Published - Sep 1 2023 |
Externally published | Yes |
Keywords
- Complimentary metal oxide semiconductor (CMOS) integrated circuits
- flexible printed circuits
- hybrid materials
- thin film circuits