Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits

Sumukh Purohit, N. Ganesh, K. S. Narayan

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of ≈ 100μs. The achievable channel length of ≈ 2.5μm for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.

Original languageEnglish
Pages (from-to)429-433
Number of pages5
JournalIEEE Journal on Flexible Electronics
Volume2
Issue number5
DOIs
StatePublished - Sep 1 2023
Externally publishedYes

Keywords

  • Complimentary metal oxide semiconductor (CMOS) integrated circuits
  • flexible printed circuits
  • hybrid materials
  • thin film circuits

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