TY - JOUR
T1 - Solution-grown small-molecule organic semiconductor with enhanced crystal alignment and areal coverage for organic thin film transistors
AU - Bi, Sheng
AU - He, Zhengran
AU - Chen, Jihua
AU - Li, Dawen
N1 - Publisher Copyright:
© 2015 Author(s).
PY - 2015/7/1
Y1 - 2015/7/1
N2 - Drop casting of small-molecule organic semiconductors typically forms crystals with random orientation and poor areal coverage, which leads to significant performance variations of organic thin-film transistors (OTFTs). In this study, we utilize the controlled evaporative self-assembly (CESA) method combined with binary solvent system to control the crystal growth. A small-molecule organic semiconductor,2,5-Di-(2-ethylhexyl)-3,6-bis(5″-n-hexyl-2,2′,5′,2″]terthiophen-5-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione (SMDPPEH), is used as an example to demonstrate the effectiveness of our approach. By optimizing the double solvent ratios, well-aligned SMDPPEH crystals with significantly improved areal coverage were achieved. As a result, the SMDPPEH based OTFTs exhibit a mobility of 1.6 × 10-2 cm2/V s, which is the highest mobility from SMDPPEH ever reported.
AB - Drop casting of small-molecule organic semiconductors typically forms crystals with random orientation and poor areal coverage, which leads to significant performance variations of organic thin-film transistors (OTFTs). In this study, we utilize the controlled evaporative self-assembly (CESA) method combined with binary solvent system to control the crystal growth. A small-molecule organic semiconductor,2,5-Di-(2-ethylhexyl)-3,6-bis(5″-n-hexyl-2,2′,5′,2″]terthiophen-5-yl)-pyrrolo[3,4-c]pyrrole-1,4-dione (SMDPPEH), is used as an example to demonstrate the effectiveness of our approach. By optimizing the double solvent ratios, well-aligned SMDPPEH crystals with significantly improved areal coverage were achieved. As a result, the SMDPPEH based OTFTs exhibit a mobility of 1.6 × 10-2 cm2/V s, which is the highest mobility from SMDPPEH ever reported.
UR - http://www.scopus.com/inward/record.url?scp=84938053949&partnerID=8YFLogxK
U2 - 10.1063/1.4927577
DO - 10.1063/1.4927577
M3 - Article
AN - SCOPUS:84938053949
SN - 2158-3226
VL - 5
JO - AIP Advances
JF - AIP Advances
IS - 7
M1 - 077170
ER -