Solutal convection during melt growth of alloyed semiconductor crystals in a steady magnetic field

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

This paper presents a model for the unsteady species transport during growth of alloyed semiconductor crystals from the melt with a planar crystal-melt interface and with an externally applied steady axial magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection. These buoyant convections drive convective transport that produce non-uniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal.

Original languageEnglish
DOIs
StatePublished - 2002
Externally publishedYes
Event40th AIAA Aerospace Sciences Meeting and Exhibit 2002 - Reno, NV, United States
Duration: Jan 14 2002Jan 17 2002

Conference

Conference40th AIAA Aerospace Sciences Meeting and Exhibit 2002
Country/TerritoryUnited States
CityReno, NV
Period01/14/0201/17/02

Fingerprint

Dive into the research topics of 'Solutal convection during melt growth of alloyed semiconductor crystals in a steady magnetic field'. Together they form a unique fingerprint.

Cite this