Abstract
This paper presents a model for the unsteady species transport during growth of alloyed semiconductor crystals from the melt with a planar crystal-melt interface and with an externally applied steady axial magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection. These buoyant convections drive convective transport that produce non-uniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal.
Original language | English |
---|---|
DOIs | |
State | Published - 2002 |
Externally published | Yes |
Event | 40th AIAA Aerospace Sciences Meeting and Exhibit 2002 - Reno, NV, United States Duration: Jan 14 2002 → Jan 17 2002 |
Conference
Conference | 40th AIAA Aerospace Sciences Meeting and Exhibit 2002 |
---|---|
Country/Territory | United States |
City | Reno, NV |
Period | 01/14/02 → 01/17/02 |