Abstract
This paper presents a model for the unsteady species transport during bulk growth of alloyed semiconductor crystals with a planar crystal-melt interface and with an externally applied steady axial magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally driven buoyant convection, or solutal convection, in addition to thermally driven buoyant convection. These buoyant convections drive convective transport, which produces nonuniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 77-81 |
| Number of pages | 5 |
| Journal | Journal of Thermophysics and Heat Transfer |
| Volume | 17 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2003 |
| Externally published | Yes |