Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices

Xiangyu Han; Rajendra Prasad Kandula; Karthik Kandasamy; Deepak Divan; Maryam Saeedifard

doi:10.1109/WiPDA.2018.8569199

Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices

Xiangyu Han, Rajendra Prasad Kandula, Karthik Kandasamy, Deepak Divan, Maryam Saeedifard

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

This paper presents device characterization results for 3.3 kV reverse-blocking Silicon Carbide (SiC) devices under Zero Voltage Switching (ZVS) conditions. A novel double-pulse test circuit to test the reverse blocking switches under soft switching conditions is proposed. The results from hard switching and soft switching are compared to highlight the effectiveness and necessity of soft switching when using 3.3 kV reverse-blocking devices. The paper also analyzes the impact of parasitic inductances and capacitances on switching performance of 3.3 kV SiC devices. The double-pulse test circuit, operating principle, experimental characterization results for a custom-built 3.3 kV reverse blocking module, and parasitic parameters extraction are presented.

Original language	English
Title of host publication	2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	185-191
Number of pages	7
ISBN (Electronic)	9781538659090
DOIs	https://doi.org/10.1109/WiPDA.2018.8569199
State	Published - Dec 7 2018
Externally published	Yes
Event	6th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018 - Atlanta, United States Duration: Oct 31 2018 → Nov 2 2018

Publication series

Name	2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018

Conference

Conference	6th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
Country/Territory	United States
City	Atlanta
Period	10/31/18 → 11/2/18

Funding

ACKNOWLEDGMENT The authors are grateful for financial support provided by Power America and Center for Distributed Energy (CDE) at Georgia Tech for this work.

Keywords

double pulse test
reverse-blocking devices
soft-switching

Access to Document

10.1109/WiPDA.2018.8569199

Cite this

Han, X., Kandula, R. P., Kandasamy, K., Divan, D., & Saeedifard, M. (2018). Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices. In 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018 (pp. 185-191). Article 8569199 (2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2018.8569199

Han, Xiangyu ; Kandula, Rajendra Prasad ; Kandasamy, Karthik et al. / Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 185-191 (2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018).

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title = "Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices",

abstract = "This paper presents device characterization results for 3.3 kV reverse-blocking Silicon Carbide (SiC) devices under Zero Voltage Switching (ZVS) conditions. A novel double-pulse test circuit to test the reverse blocking switches under soft switching conditions is proposed. The results from hard switching and soft switching are compared to highlight the effectiveness and necessity of soft switching when using 3.3 kV reverse-blocking devices. The paper also analyzes the impact of parasitic inductances and capacitances on switching performance of 3.3 kV SiC devices. The double-pulse test circuit, operating principle, experimental characterization results for a custom-built 3.3 kV reverse blocking module, and parasitic parameters extraction are presented.",

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doi = "10.1109/WiPDA.2018.8569199",

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Han, X, Kandula, RP, Kandasamy, K, Divan, D & Saeedifard, M 2018, Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices. in 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018., 8569199, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 185-191, 6th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018, Atlanta, United States, 10/31/18. https://doi.org/10.1109/WiPDA.2018.8569199

Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices. / Han, Xiangyu; Kandula, Rajendra Prasad; Kandasamy, Karthik et al.
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 185-191 8569199 (2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Saeedifard, Maryam

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N2 - This paper presents device characterization results for 3.3 kV reverse-blocking Silicon Carbide (SiC) devices under Zero Voltage Switching (ZVS) conditions. A novel double-pulse test circuit to test the reverse blocking switches under soft switching conditions is proposed. The results from hard switching and soft switching are compared to highlight the effectiveness and necessity of soft switching when using 3.3 kV reverse-blocking devices. The paper also analyzes the impact of parasitic inductances and capacitances on switching performance of 3.3 kV SiC devices. The double-pulse test circuit, operating principle, experimental characterization results for a custom-built 3.3 kV reverse blocking module, and parasitic parameters extraction are presented.

AB - This paper presents device characterization results for 3.3 kV reverse-blocking Silicon Carbide (SiC) devices under Zero Voltage Switching (ZVS) conditions. A novel double-pulse test circuit to test the reverse blocking switches under soft switching conditions is proposed. The results from hard switching and soft switching are compared to highlight the effectiveness and necessity of soft switching when using 3.3 kV reverse-blocking devices. The paper also analyzes the impact of parasitic inductances and capacitances on switching performance of 3.3 kV SiC devices. The double-pulse test circuit, operating principle, experimental characterization results for a custom-built 3.3 kV reverse blocking module, and parasitic parameters extraction are presented.

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Han X, Kandula RP, Kandasamy K, Divan D, Saeedifard M. Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices. In 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 185-191. 8569199. (2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018). doi: 10.1109/WiPDA.2018.8569199

Soft-Switching Characterization of 3.3 kV Reverse-blocking SiC Devices

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