SnSe                         2                          Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

Hong Xu; Jie Xing; Yuan Huang; Chen Ge; Jinghao Lu; Xu Han; Jianyu Du; Huiying Hao; Jingjing Dong; Hao Liu

doi:10.1186/s11671-019-2850-0

SnSe ₂ Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

Hong Xu, Jie Xing, Yuan Huang, Chen Ge, Jinghao Lu, Xu Han, Jianyu Du, Huiying Hao, Jingjing Dong, Hao Liu

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

SnSe ₂ field-effect transistor was fabricated based on exfoliated few-layered SnSe ₂ flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe ₂ FET can achieve an on/off ratio as high as ~ 10 ⁴ within 1 V bias, which is ever extremely difficult for SnSe ₂ due to its ultrahigh carrier density (10 ¹⁸ /cm ³ ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm ² V ⁻¹ s ⁻¹ at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe ₂ FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.

Original language	English
Article number	17
Journal	Nanoscale Research Letters
Volume	14
DOIs	https://doi.org/10.1186/s11671-019-2850-0
State	Published - 2019
Externally published	Yes

Funding

This work has been supported by the National Natural Science Foundation of China (Grant Nos. 11104255 and 11874405) and Fundamental Research Funds for the Central Universities. The datasets used in the current study are available from the corresponding author on reasonable request. This work has been supported by the National Natural Science Foundation of China (Grant Nos. 11104255 and 11874405) and Fundamental Research Funds for the Central Universities.

Funders	Funder number
National Natural Science Foundation of China	11874405
Young Scientists Fund	11104255
Fundamental Research Funds for the Central Universities

Keywords

Field-effect transistor
On/off ratio
Photoconductivity
SnSe

Access to Document

10.1186/s11671-019-2850-0

Cite this

Xu, H., Xing, J., Huang, Y., Ge, C., Lu, J., Han, X., Du, J., Hao, H., Dong, J., & Liu, H. (2019). SnSe ₂ Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity Nanoscale Research Letters, 14, Article 17. https://doi.org/10.1186/s11671-019-2850-0

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abstract = " SnSe 2 field-effect transistor was fabricated based on exfoliated few-layered SnSe 2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe 2 FET can achieve an on/off ratio as high as ~ 10 4 within 1 V bias, which is ever extremely difficult for SnSe 2 due to its ultrahigh carrier density (10 18 /cm 3 ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm 2 V −1 s −1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe 2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.",

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AU - Xu, Hong

AU - Xing, Jie

AU - Huang, Yuan

AU - Ge, Chen

AU - Lu, Jinghao

AU - Han, Xu

AU - Du, Jianyu

AU - Hao, Huiying

AU - Dong, Jingjing

AU - Liu, Hao

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AB - SnSe 2 field-effect transistor was fabricated based on exfoliated few-layered SnSe 2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe 2 FET can achieve an on/off ratio as high as ~ 10 4 within 1 V bias, which is ever extremely difficult for SnSe 2 due to its ultrahigh carrier density (10 18 /cm 3 ). Moreover, the subthreshold swing and mobility are both improved to ∼ 62 mV/decade and ~ 127 cm 2 V −1 s −1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe 2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.

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