SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

Shao Tsu Hung; Chi Jung Chang; Chin Ching Chen; Chien Fong Lo; Fan Ren; Stephen J. Pearton; Ivan I. Kravchenko

doi:10.1116/1.4736974

SnO₂-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

Shao Tsu Hung, Chi Jung Chang, Chin Ching Chen, Chien Fong Lo, Fan Ren, Stephen J. Pearton, Ivan I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Hydrothermally grown SnO₂ was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO₂ was improved after annealing at 400 °C. The grain growth kinetics of the SnO₂ nanomaterials, together with the O₂ gas sensing properties and sensing mechanism of the SnO₂ gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 °C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO₂ films with the AlGaN/GaN HEMT structure.

Original language	English
Article number	041214
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4736974
State	Published - Jul 2012

Funding

The work at UF was partially supported by the Office of Naval Research (ONR) under Contract No. 00075094 monitored by Chagaan Baatar and NSF (J. M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. The work at FCU was supported by the National Science Council (NSC) of Taiwan under Contract No. NSC 100-2628-E-035-003. The authors are also thankful for the assistance from the Precision Instrument Support Center of Feng Chia University.

Funders	Funder number
Chagaan Baatar
Office of Basic Energy Sciences
Scientific User Facilities Division
National Science Foundation	1159682
Office of Naval Research	00075094
U.S. Department of Energy
Oak Ridge National Laboratory
National Science Council

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title = "SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors",

abstract = "Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 °C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 °C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure.",

author = "Hung, {Shao Tsu} and Chang, {Chi Jung} and Chen, {Chin Ching} and Lo, {Chien Fong} and Fan Ren and Pearton, {Stephen J.} and Kravchenko, {Ivan I.}",

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AU - Chang, Chi Jung

AU - Chen, Chin Ching

AU - Lo, Chien Fong

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kravchenko, Ivan I.

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AB - Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 °C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 °C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure.

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SnO₂-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

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