Sn/Ge(111) surface charge-density-wave phase transition

T. E. Kidd; T. Miller; M. Y. Chou; T. C. Chiang

doi:10.1103/PhysRevLett.85.3684

Sn/Ge(111) surface charge-density-wave phase transition

T. E. Kidd, T. Miller, M. Y. Chou, T. C. Chiang

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38 Scopus citations

Abstract

New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.

Original language	English
Pages (from-to)	3684-3687
Number of pages	4
Journal	Physical Review Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.85.3684
State	Published - Oct 23 2000
Externally published	Yes

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title = "Sn/Ge(111) surface charge-density-wave phase transition",

abstract = "New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.",

author = "Kidd, \{T. E.\} and T. Miller and Chou, \{M. Y.\} and Chiang, \{T. C.\}",

year = "2000",

month = oct,

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doi = "10.1103/PhysRevLett.85.3684",

language = "English",

volume = "85",

pages = "3684--3687",

journal = "Physical Review Letters",

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publisher = "American Physical Society",

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AU - Kidd, T. E.

AU - Miller, T.

AU - Chou, M. Y.

AU - Chiang, T. C.

PY - 2000/10/23

Y1 - 2000/10/23

N2 - New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.

AB - New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.

UR - https://www.scopus.com/pages/publications/0034293855

U2 - 10.1103/PhysRevLett.85.3684

DO - 10.1103/PhysRevLett.85.3684

M3 - Article

AN - SCOPUS:0034293855

SN - 0031-9007

VL - 85

SP - 3684

EP - 3687

JO - Physical Review Letters

JF - Physical Review Letters

IS - 17

ER -

Sn/Ge(111) surface charge-density-wave phase transition

Abstract

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