Sn/Ge(111) surface charge-density-wave phase transition

T. E. Kidd; T. Miller; M. Y. Chou; T. C. Chiang

doi:10.1103/PhysRevLett.85.3684

Sn/Ge(111) surface charge-density-wave phase transition

T. E. Kidd, T. Miller, M. Y. Chou, T. C. Chiang

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38 Scopus citations

Abstract

New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.

Original language	English
Pages (from-to)	3684-3687
Number of pages	4
Journal	Physical Review Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.85.3684
State	Published - Oct 23 2000
Externally published	Yes

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10.1103/PhysRevLett.85.3684

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title = "Sn/Ge(111) surface charge-density-wave phase transition",

abstract = "New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.",

author = "Kidd, {T. E.} and T. Miller and Chou, {M. Y.} and Chiang, {T. C.}",

year = "2000",

month = oct,

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AU - Kidd, T. E.

AU - Miller, T.

AU - Chou, M. Y.

AU - Chiang, T. C.

PY - 2000/10/23

Y1 - 2000/10/23

N2 - New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.

AB - New angle-resolved photoemission measurements of the valence structure of Sn/Ge(111) were carried out, focusing on the (3×3) zone boundary. A gap opening was observed around the (3×3) zone boundary. A slight change in state occupancy due to defect doping led to large changes in electronic response, resulting in a Peierls-like (3×3) instability.

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DO - 10.1103/PhysRevLett.85.3684

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JO - Physical Review Letters

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Sn/Ge(111) surface charge-density-wave phase transition

Abstract

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