Sn-InAs Nanowire Shadow-Defined Josephson Junctions

Amritesh Sharma; An Hsi Chen; Connor P. Dempsey; Amrita Purkayastha; Mihir Pendharkar; Susheng Tan; Christopher J. Palmstrøm; Sergey M. Frolov; Moïra Hocevar

doi:10.1021/acs.nanolett.5c02410

Sn-InAs Nanowire Shadow-Defined Josephson Junctions

Amritesh Sharma
, An Hsi Chen
, Connor P. Dempsey
, Amrita Purkayastha
, Mihir Pendharkar
, Susheng Tan
, Christopher J. Palmstrøm
, Sergey M. Frolov
, Moïra Hocevar

Quantum Heterostructures

Research output: Contribution to journal › Article › peer-review

Abstract

Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.

Original language	English
Pages (from-to)	12869-12875
Number of pages	7
Journal	Nano Letters
Volume	25
Issue number	34
DOIs	https://doi.org/10.1021/acs.nanolett.5c02410
State	Published - Aug 27 2025

Funding

Nanowire growth was supported by ANR HYBRID (ANR-17-PIRE-0001), ANR IMAGIQUE (ANR-42-PRC-0047), IRP HYNATOQ, and the Transatlantic Research Partnership. Sn shell growth was supported by the NSF Quantum Foundry at UCSB funded via the Q-AMASE-i program under award DMR-1906325. TEM characterization was supported by the U.S. Department of Energy through Grant DE-SC-0019274. Transport measurements were supported by the U.S. Department of Energy, Basic Energy Sciences Grant DE-SC-0022073.

Keywords

Hybrid superconductor-semiconductors
InAs
Josephson junctions
superconducting proximity effect
β-Sn

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10.1021/acs.nanolett.5c02410

Cite this

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title = "Sn-InAs Nanowire Shadow-Defined Josephson Junctions",

abstract = "Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.",

keywords = "Hybrid superconductor-semiconductors, InAs, Josephson junctions, superconducting proximity effect, β-Sn",

author = "Amritesh Sharma and Chen, \{An Hsi\} and Dempsey, \{Connor P.\} and Amrita Purkayastha and Mihir Pendharkar and Susheng Tan and Palmstr{\o}m, \{Christopher J.\} and Frolov, \{Sergey M.\} and Mo{\"i}ra Hocevar",

note = "Publisher Copyright: {\textcopyright} 2025 The Authors. Published by American Chemical Society",

year = "2025",

month = aug,

day = "27",

doi = "10.1021/acs.nanolett.5c02410",

language = "English",

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T1 - Sn-InAs Nanowire Shadow-Defined Josephson Junctions

AU - Sharma, Amritesh

AU - Chen, An Hsi

AU - Dempsey, Connor P.

AU - Purkayastha, Amrita

AU - Pendharkar, Mihir

AU - Tan, Susheng

AU - Palmstrøm, Christopher J.

AU - Frolov, Sergey M.

AU - Hocevar, Moïra

PY - 2025/8/27

Y1 - 2025/8/27

N2 - Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.

AB - Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.

KW - Hybrid superconductor-semiconductors

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KW - superconducting proximity effect

KW - β-Sn

UR - https://www.scopus.com/pages/publications/105014226091

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DO - 10.1021/acs.nanolett.5c02410

M3 - Article

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SP - 12869

EP - 12875

JO - Nano Letters

JF - Nano Letters

IS - 34

ER -

Sn-InAs Nanowire Shadow-Defined Josephson Junctions

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