Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold

Yuzhai Pan; Yongqiang Ning; Hui Suo; Yun Liu; Lijun Wang; Jiuling Lin; Dongjiang Wu; Shouchun Li

doi:10.1117/12.408443

Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold

Yuzhai Pan, Yongqiang Ning, Hui Suo, Yun Liu, Lijun Wang, Jiuling Lin, Dongjiang Wu, Shouchun Li

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The lasing modes and the spontaneous emission factors of microdisk lasers are analyzed simply, in this paper, InGaAs/InGaAsP multiple quantum wells (MQW) microdisk lasers are fabricated by using the methods of active ion etching and selective chemical etching. The diameter of the microdisk lasers was 3 micrometers. InGaAs/InGaAsP MQW microdisk lasers was optically pumped when cooled with liquid nitrogen. We obtained the single-mode lasing at 1.5 micrometers wavelength, with threshold pump power 18 (mu) w.

Original language	English
Pages (from-to)	244-247
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4086
DOIs	https://doi.org/10.1117/12.408443
State	Published - 2000
Externally published	Yes
Event	4th International Conference on Thin Film Physics and Applications - Shanghai, China Duration: May 8 2000 → May 11 2000

Keywords

Laser
Lasing
Microdisk
Spontaneous emission

Access to Document

10.1117/12.408443

Cite this

@article{fd8d6e5f348540f890ad9ade8847ba6d,

title = "Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold",

abstract = "The lasing modes and the spontaneous emission factors of microdisk lasers are analyzed simply, in this paper, InGaAs/InGaAsP multiple quantum wells (MQW) microdisk lasers are fabricated by using the methods of active ion etching and selective chemical etching. The diameter of the microdisk lasers was 3 micrometers. InGaAs/InGaAsP MQW microdisk lasers was optically pumped when cooled with liquid nitrogen. We obtained the single-mode lasing at 1.5 micrometers wavelength, with threshold pump power 18 (mu) w.",

keywords = "Laser, Lasing, Microdisk, Spontaneous emission",

author = "Yuzhai Pan and Yongqiang Ning and Hui Suo and Yun Liu and Lijun Wang and Jiuling Lin and Dongjiang Wu and Shouchun Li",

note = "Publisher Copyright: {\textcopyright} 200 COPYRIGHT SPIE.; 4th International Conference on Thin Film Physics and Applications ; Conference date: 08-05-2000 Through 11-05-2000",

year = "2000",

doi = "10.1117/12.408443",

language = "English",

volume = "4086",

pages = "244--247",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - JOUR

T1 - Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold

AU - Pan, Yuzhai

AU - Ning, Yongqiang

AU - Suo, Hui

AU - Liu, Yun

AU - Wang, Lijun

AU - Lin, Jiuling

AU - Wu, Dongjiang

AU - Li, Shouchun

N1 - Publisher Copyright: © 200 COPYRIGHT SPIE.

PY - 2000

Y1 - 2000

N2 - The lasing modes and the spontaneous emission factors of microdisk lasers are analyzed simply, in this paper, InGaAs/InGaAsP multiple quantum wells (MQW) microdisk lasers are fabricated by using the methods of active ion etching and selective chemical etching. The diameter of the microdisk lasers was 3 micrometers. InGaAs/InGaAsP MQW microdisk lasers was optically pumped when cooled with liquid nitrogen. We obtained the single-mode lasing at 1.5 micrometers wavelength, with threshold pump power 18 (mu) w.

AB - The lasing modes and the spontaneous emission factors of microdisk lasers are analyzed simply, in this paper, InGaAs/InGaAsP multiple quantum wells (MQW) microdisk lasers are fabricated by using the methods of active ion etching and selective chemical etching. The diameter of the microdisk lasers was 3 micrometers. InGaAs/InGaAsP MQW microdisk lasers was optically pumped when cooled with liquid nitrogen. We obtained the single-mode lasing at 1.5 micrometers wavelength, with threshold pump power 18 (mu) w.

KW - Laser

KW - Lasing

KW - Microdisk

KW - Spontaneous emission

UR - http://www.scopus.com/inward/record.url?scp=0000293063&partnerID=8YFLogxK

U2 - 10.1117/12.408443

DO - 10.1117/12.408443

M3 - Conference article

AN - SCOPUS:0000293063

SN - 0277-786X

VL - 4086

SP - 244

EP - 247

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 4th International Conference on Thin Film Physics and Applications

Y2 - 8 May 2000 through 11 May 2000

ER -

Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this