Abstract
Epitaxial, c -axis oriented BaTiO3 thin films were deposited using pulsed laser ablation on flexible, polycrystalline Ni alloy tape with biaxially textured oxide buffer multilayers. The high quality of epitaxial BaTiO3 thin films with P4mm group symmetry was confirmed by x-ray diffraction. The microscopic ferroelectric domain structure and the piezoelectric domain switching in these films were confirmed via spatially resolved piezoresponse mapping and local hysteresis loops. Macroscopic measurements demonstrate that the films have well-saturated hysteresis loops with a high remanent polarization of ∼11.5 μC/ cm2. Such high-quality, single-crystal-like BaTiO3 films on low-cost, polycrystalline, flexible Ni alloy substrates are attractive for applications in flexible lead-free ferroelectric devices.
| Original language | English |
|---|---|
| Article number | 252903 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 25 |
| DOIs | |
| State | Published - 2009 |
Funding
The authors thank V. Selvamanikcam at SuperPower Inc. for the Hastelloy substrates covered with LMO/homoepitaxial-MgO/IBAD-MgO, and S. V. Kalinin and H. N. Lee at ORNL for review of the paper. Research sponsored by the LDRD Program of ORNL, managed by UT-Battelle, LLC for the U.S. DOE. A portion (PFM and SSPFM) of this research was performed at ORNL’s CNMS, sponsored by the SUFD, Office of BES, U.S. DOE.
| Funders | Funder number |
|---|---|
| Office of BES | |
| SUFD | |
| U.S. Department of Energy | |
| Oak Ridge National Laboratory | |
| Laboratory Directed Research and Development |