Single crystal growth of the Er2PdSi3 intermetallic compound

I. Mazilu; M. Frontzek; W. Löser; G. Behr; A. Teresiak; L. Schultz

doi:10.1016/j.jcrysgro.2004.10.134

Single crystal growth of the Er₂PdSi₃ intermetallic compound

I. Mazilu, M. Frontzek, W. Löser, G. Behr, A. Teresiak, L. Schultz

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

Single crystals of the Er2PdSi3 intermetallic compound melting congruently at 1648 °C, were grown by a floating zone method with radiation heating. The control of oxygen content was the key factor to avoid oxide precipitates, which can affect effective grain selection in the crystal growth process. Crystals grown at velocities of 5 mm/h with a preferred direction close to (1 0 0) with inclination angles of about 12°against the rod axis show very distinct facets at the rod surface. The crystals are Pd-depleted and Si-rich with respect to the nominal Er2PdSi3 stoichiometry, but exhibit inferior element segregation. Measurements on oriented single crystalline samples revealed antiferromagnetic ordering below 7 K, a magnetic easy axis parallel to the (0 0 1) axis of the AlB2-type hexagonal unit cell, and anisotropic electric properties.

Original language	English
Pages (from-to)	e103-e107
Journal	Journal of Crystal Growth
Volume	275
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.10.134
State	Published - Feb 15 2005
Externally published	Yes

Funding

The authors would like to express their gratitude to S. Müller-Litvanyi, J. Werner and S. Pichl for experimental assistance and Dr. W. Gruner for performing the O analyses. The financial support of the Deutsche Forschungsgemeinschaft within the SFB 463 “Rare-Earth Intermetallics: Structure, Magnetism and Transport” is gratefully acknowledged.

Funders	Funder number
Deutsche Forschungsgemeinschaft	SFB 463

Keywords

A2. Floating zone technique
B1. Rare earth compounds
B2. Magnetic materials

Access to Document

10.1016/j.jcrysgro.2004.10.134

Cite this

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title = "Single crystal growth of the Er2PdSi3 intermetallic compound",

abstract = "Single crystals of the Er2PdSi3 intermetallic compound melting congruently at 1648 °C, were grown by a floating zone method with radiation heating. The control of oxygen content was the key factor to avoid oxide precipitates, which can affect effective grain selection in the crystal growth process. Crystals grown at velocities of 5 mm/h with a preferred direction close to (1 0 0) with inclination angles of about 12°against the rod axis show very distinct facets at the rod surface. The crystals are Pd-depleted and Si-rich with respect to the nominal Er2PdSi3 stoichiometry, but exhibit inferior element segregation. Measurements on oriented single crystalline samples revealed antiferromagnetic ordering below 7 K, a magnetic easy axis parallel to the (0 0 1) axis of the AlB2-type hexagonal unit cell, and anisotropic electric properties.",

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AU - Mazilu, I.

AU - Frontzek, M.

AU - Löser, W.

AU - Behr, G.

AU - Teresiak, A.

AU - Schultz, L.

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AB - Single crystals of the Er2PdSi3 intermetallic compound melting congruently at 1648 °C, were grown by a floating zone method with radiation heating. The control of oxygen content was the key factor to avoid oxide precipitates, which can affect effective grain selection in the crystal growth process. Crystals grown at velocities of 5 mm/h with a preferred direction close to (1 0 0) with inclination angles of about 12°against the rod axis show very distinct facets at the rod surface. The crystals are Pd-depleted and Si-rich with respect to the nominal Er2PdSi3 stoichiometry, but exhibit inferior element segregation. Measurements on oriented single crystalline samples revealed antiferromagnetic ordering below 7 K, a magnetic easy axis parallel to the (0 0 1) axis of the AlB2-type hexagonal unit cell, and anisotropic electric properties.

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