TY - GEN
T1 - Single crystal growth and phase stability of photovoltaic grade ZnSiP2 by flux technique
AU - Martinez, Aaron D.
AU - Warren, Emily L.
AU - Dippo, Patricia C.
AU - Kuciauskas, Darius
AU - Ortiz, Brenden R.
AU - Guthrey, Harvey
AU - Duda, Anna
AU - Norman, Andrew G.
AU - Toberer, Eric S.
AU - Tamboli, Adele C.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/12/14
Y1 - 2015/12/14
N2 - ZnSiP2 is a potential optoelectronic material with possible application in lasers, LED's, photonic integrated circuits, and photovoltaics. The development of ZnSiP2 as a photovoltaic material could address the current technological challenge of implementing a monolithic top cell on silicon for tandem photovoltaics. In this work we present a detailed description of the growth of ZnSiP2 single crystals, which has enabled thorough optoelectronic characterization. A flux growth technique was used, under various conditions, to grow ZnSiP2 single crystals in Zn solution. The results of these growth experiments, along with analysis of previously determined phase diagrams, show that three secondary phases form as a result of the Zn flux growth technique: Zn3P2, Si, and the remaining Zn flux. Potential reasons for the formation of these particular phases are discussed, but their presence is found to be non-detrimental, and they can easily be removed. The resulting single crystals are high purity and enable the characterization of the fundamental optoelectronic properties of ZnSiP2.
AB - ZnSiP2 is a potential optoelectronic material with possible application in lasers, LED's, photonic integrated circuits, and photovoltaics. The development of ZnSiP2 as a photovoltaic material could address the current technological challenge of implementing a monolithic top cell on silicon for tandem photovoltaics. In this work we present a detailed description of the growth of ZnSiP2 single crystals, which has enabled thorough optoelectronic characterization. A flux growth technique was used, under various conditions, to grow ZnSiP2 single crystals in Zn solution. The results of these growth experiments, along with analysis of previously determined phase diagrams, show that three secondary phases form as a result of the Zn flux growth technique: Zn3P2, Si, and the remaining Zn flux. Potential reasons for the formation of these particular phases are discussed, but their presence is found to be non-detrimental, and they can easily be removed. The resulting single crystals are high purity and enable the characterization of the fundamental optoelectronic properties of ZnSiP2.
KW - ZnSiP2
KW - photovoltaic cells
KW - silicon
KW - single crystal growth
KW - tandem photovoltaics
UR - http://www.scopus.com/inward/record.url?scp=84961665628&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7355697
DO - 10.1109/PVSC.2015.7355697
M3 - Conference contribution
AN - SCOPUS:84961665628
T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Y2 - 14 June 2015 through 19 June 2015
ER -
