Single-band model for diluted magnetic semiconductors: Dynamical and transport properties and relevance of clustered states

G. Alvarez, E. Dagotto

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Abstract

Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS’s) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work [G. Alvarez et al., Phys. Rev. Lett. 89, 277202 (2002)] where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature TC. This conclusion is based on the calculation of the resistivity vs temperature, that shows a soft metal-to-insulator transition near TC, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS’s and manganites are also discussed.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number4
DOIs
StatePublished - Jul 15 2003
Externally publishedYes

Funding

FundersFunder number
Directorate for Mathematical and Physical Sciences0122523
Directorate for Mathematical and Physical Sciences

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