Simulation of strain induced interface migration in symmetric tilt grain boundaries

S. Namilae; B. Radhakrishnan; G. B. Sarma

Simulation of strain induced interface migration in symmetric tilt grain boundaries

S. Namilae, B. Radhakrishnan, G. B. Sarma

Multiscale Materials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Grain boundary migration of flat symmetric tilt grain boundaries is simulated using molecular dynamics. The driving force for migration is achieved by applying uniaxial strain on one of the grains in the bicrystal, enabling the growth of strain free grain at the expense of strained grain. Arrhenius dependence of grain boundary mobility on temperature and a linear relation between mobility and grain boundary velocity are observed. Simulations suggest that the mechanism of migration is dependent on vacancy diffusion combined with local reshuffling of atoms near the grain boundary.

Original language	English
Title of host publication	General Abstracts
Subtitle of host publication	Structural Materials Division 2007 - Proceedings of Symposium held during the 2007 TMS Annual Meeting
Pages	55-68
Number of pages	14
State	Published - 2007
Event	136th TMS Annual Meeting, 2007 - Orlando, FL, United States Duration: Feb 25 2007 → Mar 1 2007

Publication series

Name	TMS Annual Meeting

Conference

Conference	136th TMS Annual Meeting, 2007
Country/Territory	United States
City	Orlando, FL
Period	02/25/07 → 03/1/07

Keywords

Grain boundary
Migration
Molecular dynamics

Cite this

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title = "Simulation of strain induced interface migration in symmetric tilt grain boundaries",

abstract = "Grain boundary migration of flat symmetric tilt grain boundaries is simulated using molecular dynamics. The driving force for migration is achieved by applying uniaxial strain on one of the grains in the bicrystal, enabling the growth of strain free grain at the expense of strained grain. Arrhenius dependence of grain boundary mobility on temperature and a linear relation between mobility and grain boundary velocity are observed. Simulations suggest that the mechanism of migration is dependent on vacancy diffusion combined with local reshuffling of atoms near the grain boundary.",

keywords = "Grain boundary, Migration, Molecular dynamics",

author = "S. Namilae and B. Radhakrishnan and Sarma, {G. B.}",

year = "2007",

language = "English",

isbn = "9780873396868",

series = "TMS Annual Meeting",

pages = "55--68",

booktitle = "General Abstracts",

note = "136th TMS Annual Meeting, 2007 ; Conference date: 25-02-2007 Through 01-03-2007",

}

Simulation of strain induced interface migration in symmetric tilt grain boundaries. / Namilae, S.; Radhakrishnan, B.; Sarma, G. B.
General Abstracts: Structural Materials Division 2007 - Proceedings of Symposium held during the 2007 TMS Annual Meeting. 2007. p. 55-68 (TMS Annual Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation of strain induced interface migration in symmetric tilt grain boundaries

AU - Namilae, S.

AU - Radhakrishnan, B.

AU - Sarma, G. B.

PY - 2007

Y1 - 2007

N2 - Grain boundary migration of flat symmetric tilt grain boundaries is simulated using molecular dynamics. The driving force for migration is achieved by applying uniaxial strain on one of the grains in the bicrystal, enabling the growth of strain free grain at the expense of strained grain. Arrhenius dependence of grain boundary mobility on temperature and a linear relation between mobility and grain boundary velocity are observed. Simulations suggest that the mechanism of migration is dependent on vacancy diffusion combined with local reshuffling of atoms near the grain boundary.

AB - Grain boundary migration of flat symmetric tilt grain boundaries is simulated using molecular dynamics. The driving force for migration is achieved by applying uniaxial strain on one of the grains in the bicrystal, enabling the growth of strain free grain at the expense of strained grain. Arrhenius dependence of grain boundary mobility on temperature and a linear relation between mobility and grain boundary velocity are observed. Simulations suggest that the mechanism of migration is dependent on vacancy diffusion combined with local reshuffling of atoms near the grain boundary.

KW - Grain boundary

KW - Migration

KW - Molecular dynamics

UR - http://www.scopus.com/inward/record.url?scp=40749083857&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:40749083857

SN - 9780873396868

T3 - TMS Annual Meeting

SP - 55

EP - 68

BT - General Abstracts

T2 - 136th TMS Annual Meeting, 2007

Y2 - 25 February 2007 through 1 March 2007

ER -

Simulation of strain induced interface migration in symmetric tilt grain boundaries

Abstract

Publication series

Conference

Keywords

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