Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

Fabio A. Marino; David A. Cullen; David J. Smith; Martha R. McCartney; Marco Saraniti

doi:10.1063/1.3311555

Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

Fabio A. Marino, David A. Cullen, David J. Smith, Martha R. McCartney, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a AlGaN/GaN high electron mobility transistor device have been investigated. Simulations were performed using a full-band cellular Monte Carlo simulator, which included electronic dispersion and the phonon spectra. Quantum effects were taken into account using the effective potential method. Experimental extraction of potential profiles across the device was carried out using off-axis electron holography. Based on comparison to simulations, the differences between the theoretical predictions and experimental results could be explained, thereby providing better understanding of device operation.

Original language	English
Article number	054516
Journal	Journal of Applied Physics
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.3311555
State	Published - 2010
Externally published	Yes

Funding

This work was partially supported by the Air Force Research Laboratory, Contract No. FA8650-08-C-1395 (monitor: C. Bozada), and by the Arizona Institute for Nano-Electronics at Arizona State University. We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy. Finally, we acknowledge Dr. Darrell Hill and Dr. Peter L. Fejes, Freescale, for providing the device samples.

Funders	Funder number
Arizona Institute for Nano-Electronics at Arizona State University
Air Force Research Laboratory	FA8650-08-C-1395

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abstract = "The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a AlGaN/GaN high electron mobility transistor device have been investigated. Simulations were performed using a full-band cellular Monte Carlo simulator, which included electronic dispersion and the phonon spectra. Quantum effects were taken into account using the effective potential method. Experimental extraction of potential profiles across the device was carried out using off-axis electron holography. Based on comparison to simulations, the differences between the theoretical predictions and experimental results could be explained, thereby providing better understanding of device operation.",

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AB - The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a AlGaN/GaN high electron mobility transistor device have been investigated. Simulations were performed using a full-band cellular Monte Carlo simulator, which included electronic dispersion and the phonon spectra. Quantum effects were taken into account using the effective potential method. Experimental extraction of potential profiles across the device was carried out using off-axis electron holography. Based on comparison to simulations, the differences between the theoretical predictions and experimental results could be explained, thereby providing better understanding of device operation.

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Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

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