Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

Fabio A. Marino, David A. Cullen, David J. Smith, Martha R. McCartney, Marco Saraniti

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Abstract

The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a AlGaN/GaN high electron mobility transistor device have been investigated. Simulations were performed using a full-band cellular Monte Carlo simulator, which included electronic dispersion and the phonon spectra. Quantum effects were taken into account using the effective potential method. Experimental extraction of potential profiles across the device was carried out using off-axis electron holography. Based on comparison to simulations, the differences between the theoretical predictions and experimental results could be explained, thereby providing better understanding of device operation.

Original languageEnglish
Article number054516
JournalJournal of Applied Physics
Volume107
Issue number5
DOIs
StatePublished - 2010
Externally publishedYes

Funding

This work was partially supported by the Air Force Research Laboratory, Contract No. FA8650-08-C-1395 (monitor: C. Bozada), and by the Arizona Institute for Nano-Electronics at Arizona State University. We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy. Finally, we acknowledge Dr. Darrell Hill and Dr. Peter L. Fejes, Freescale, for providing the device samples.

FundersFunder number
Arizona Institute for Nano-Electronics at Arizona State University
Air Force Research LaboratoryFA8650-08-C-1395

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