Simulation and experimental research of a high-order Bragg grating semiconductor laser

E. Siyu, Yin Li Zhou, Xing Zhang, Jianwei Zhang, Yugang Zeng, Jinjiang Cui, Yun Liu, Yongqiang Ning, Lijun Wang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, the influence of the epitaxial structure on distributed Bragg reflector (DBR) grating characteristics is studied by simulation analysis. Comparative analysis shows that the symmetrical epitaxial structure can achieve a lower threshold current and, thus, a higher power. Based on the simulated structure, a DBR laser based on a symmetric epitaxial structure was fabricated, and a single longitudinal mode laser output at ∼1060 nm was obtained. The maximum power was 104.5mW, and the side mode suppression ratio (SMSR) is 43 dB.

Original languageEnglish
Pages (from-to)6076-6079
Number of pages4
JournalApplied Optics
Volume60
Issue number21
DOIs
StatePublished - Jul 20 2021
Externally publishedYes

Fingerprint

Dive into the research topics of 'Simulation and experimental research of a high-order Bragg grating semiconductor laser'. Together they form a unique fingerprint.

Cite this