Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

Ramsey Hazbun; John Hart; Ryan Hickey; Ayana Ghosh; Nalin Fernando; Stefan Zollner; Thomas N. Adam; James Kolodzey

doi:10.1016/j.jcrysgro.2016.03.018

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

Ramsey Hazbun, John Hart, Ryan Hickey, Ayana Ghosh, Nalin Fernando, Stefan Zollner, Thomas N. Adam, James Kolodzey

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

Original language	English
Pages (from-to)	21-27
Number of pages	7
Journal	Journal of Crystal Growth
Volume	444
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.03.018
State	Published - Jun 15 2016
Externally published	Yes

Funding

This research was supported by gifts from IBM Corporation , Air Liquide, United States , and Thorlabs , and by AFOSR Grant FA9550-14-1-0207 , FA9550-13-1-0022 Subaward Q01573 and ARO Grant W911NF1210380, All funding and correspondence was through the Delaware Research and Technology Center in Newark, DE, United States .

Funders	Funder number
Air Force Office of Scientific Research	FA9550-13-1-0022 Subaward Q01573, FA9550-14-1-0207
Army Research Office	W911NF1210380
International Business Machines Corporation

Keywords

A1. Characterization
A1. Crystal morphology
A1. Crystal structure
A1. X-ray diffraction
A3. Chemical vapor deposition
B2. Semiconducting silicon compounds

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10.1016/j.jcrysgro.2016.03.018

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title = "Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition",

abstract = "The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.",

keywords = "A1. Characterization, A1. Crystal morphology, A1. Crystal structure, A1. X-ray diffraction, A3. Chemical vapor deposition, B2. Semiconducting silicon compounds",

author = "Ramsey Hazbun and John Hart and Ryan Hickey and Ayana Ghosh and Nalin Fernando and Stefan Zollner and Adam, {Thomas N.} and James Kolodzey",

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T1 - Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

AU - Hazbun, Ramsey

AU - Hart, John

AU - Hickey, Ryan

AU - Ghosh, Ayana

AU - Fernando, Nalin

AU - Zollner, Stefan

AU - Adam, Thomas N.

AU - Kolodzey, James

PY - 2016/6/15

Y1 - 2016/6/15

N2 - The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

AB - The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

KW - A1. Characterization

KW - A1. Crystal morphology

KW - A1. Crystal structure

KW - A1. X-ray diffraction

KW - A3. Chemical vapor deposition

KW - B2. Semiconducting silicon compounds

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DO - 10.1016/j.jcrysgro.2016.03.018

M3 - Article

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SN - 0022-0248

VL - 444

SP - 21

EP - 27

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

Abstract

Funding

Keywords

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