Silicon-doped β -Ga2O3films grown at 1 μ m/h by suboxide molecular-beam epitaxy

Kathy Azizie; Felix V.E. Hensling; Cameron A. Gorsak; Yunjo Kim; Naomi A. Pieczulewski; Daniel M. Dryden; M. K.Indika Senevirathna; Selena Coye; Shun Li Shang; Jacob Steele; Patrick Vogt; Nicholas A. Parker; Yorick A. Birkhölzer; Jonathan P. McCandless; Debdeep Jena; Huili G. Xing; Zi Kui Liu; Michael D. Williams; Andrew J. Green; Kelson Chabak; David A. Muller; Adam T. Neal; Shin Mou; Michael O. Thompson; Hari P. Nair; Darrell G. Schlom

doi:10.1063/5.0139622

Silicon-doped β -Ga₂O₃films grown at 1 μ m/h by suboxide molecular-beam epitaxy

Kathy Azizie
, Felix V.E. Hensling
, Cameron A. Gorsak
, Yunjo Kim
, Naomi A. Pieczulewski
, Daniel M. Dryden
, M. K.Indika Senevirathna
, Selena Coye
, Shun Li Shang
, Jacob Steele
, Patrick Vogt
, Nicholas A. Parker
, Yorick A. Birkhölzer
, Jonathan P. McCandless
, Debdeep Jena
, Huili G. Xing
, Zi Kui Liu
, Michael D. Williams
, Andrew J. Green
, Kelson Chabak

David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 μm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm-3. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98% Ga2O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of β-Ga2O3 by conventional MBE. As a result, a growth rate of ∼1 μm/h is readily achieved at a relatively low growth temperature (Tsub ≈ 525 °C), resulting in films with high structural perfection and smooth surfaces (rms roughness of <2 nm on ∼1 μm thick films). Silicon-containing oxide sources (SiO and SiO2) producing an SiO suboxide molecular beam are used to dope the β-Ga2O3 layers. Temperature-dependent Hall effect measurements on a 1 μm thick film with a mobile carrier concentration of 2.7 × 1017 cm-3 reveal a room-temperature mobility of 124 cm2 V-1 s-1 that increases to 627 cm2 V-1 s-1 at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working metal-semiconductor field-effect transistors made from these silicon-doped β-Ga2O3 films grown by S-MBE at growth rates of ∼1 μm/h.

Original language	English
Article number	041102
Journal	APL Materials
Volume	11
Issue number	4
DOIs	https://doi.org/10.1063/5.0139622
State	Published - Apr 1 2023
Externally published	Yes

Funding

K.A., C.A.G., N.A.P., J.S., J.P.M., D.J., H.G.X., D.A.M., M.O.T., H.P.N., and D.G.S. acknowledge the support from the AFOSR/AFRL ACCESS Center of Excellence under Award No. FA9550-18-1-0529. J.P.M. also acknowledges the support from the National Science Foundation within a Graduate Research Fellowship under Grant No. DGE-1650441. P.V. and Y.A.B. acknowledge the support from ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. F.V.E.H. acknowledges the support from the Alexander von Humboldt Foundation in the form of a Feodor Lynen fellowship. F.V.E.H. also acknowledges the support from the National Science Foundation (NSF) [Platform for the Accelerated Realization, Analysis and Discovery of Interface Materials (PARADIM)] under Cooperative Agreement No. DMR-1539918. M.D.W., D.A.M., and D.G.S. acknowledge the support from the NSF under DMR-2122147. M.D.W. also acknowledges NSF Grant No. HRD-1924204 and ONR Award No. N00014-21-1-2823. This work made use of the Cornell Center for Materials Research (CCMR) Shared Facilities, which are supported through the NSF MRSEC Program (Grant No. DMR-1719875). The substrate preparation was performed, in part, at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the NSF (Grant No. NNCI-2025233). This work also made use of the Cornell Energy Systems Institute Shared Facilities partly sponsored by the NSF (Grant No. MRI DMR-1338010).

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10.1063/5.0139622

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Azizie, K., Hensling, F. V. E., Gorsak, C. A., Kim, Y., Pieczulewski, N. A., Dryden, D. M., Senevirathna, M. K. I., Coye, S., Shang, S. L., Steele, J., Vogt, P., Parker, N. A., Birkhölzer, Y. A., McCandless, J. P., Jena, D., Xing, H. G., Liu, Z. K., Williams, M. D., Green, A. J., ... Schlom, D. G. (2023). Silicon-doped β -Ga₂O₃films grown at 1 μ m/h by suboxide molecular-beam epitaxy. APL Materials, 11(4), Article 041102. https://doi.org/10.1063/5.0139622

@article{3826e6591c954e63b8eca005e8c0057f,

title = "Silicon-doped β -Ga2O3films grown at 1 μ m/h by suboxide molecular-beam epitaxy",

abstract = "We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 μm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm-3. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga2O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of β-Ga2O3 by conventional MBE. As a result, a growth rate of ∼1 μm/h is readily achieved at a relatively low growth temperature (Tsub ≈ 525 °C), resulting in films with high structural perfection and smooth surfaces (rms roughness of <2 nm on ∼1 μm thick films). Silicon-containing oxide sources (SiO and SiO2) producing an SiO suboxide molecular beam are used to dope the β-Ga2O3 layers. Temperature-dependent Hall effect measurements on a 1 μm thick film with a mobile carrier concentration of 2.7 × 1017 cm-3 reveal a room-temperature mobility of 124 cm2 V-1 s-1 that increases to 627 cm2 V-1 s-1 at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working metal-semiconductor field-effect transistors made from these silicon-doped β-Ga2O3 films grown by S-MBE at growth rates of ∼1 μm/h.",

author = "Kathy Azizie and Hensling, \{Felix V.E.\} and Gorsak, \{Cameron A.\} and Yunjo Kim and Pieczulewski, \{Naomi A.\} and Dryden, \{Daniel M.\} and Senevirathna, \{M. K.Indika\} and Selena Coye and Shang, \{Shun Li\} and Jacob Steele and Patrick Vogt and Parker, \{Nicholas A.\} and Birkh{\"o}lzer, \{Yorick A.\} and McCandless, \{Jonathan P.\} and Debdeep Jena and Xing, \{Huili G.\} and Liu, \{Zi Kui\} and Williams, \{Michael D.\} and Green, \{Andrew J.\} and Kelson Chabak and Muller, \{David A.\} and Neal, \{Adam T.\} and Shin Mou and Thompson, \{Michael O.\} and Nair, \{Hari P.\} and Schlom, \{Darrell G.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = apr,

day = "1",

doi = "10.1063/5.0139622",

language = "English",

volume = "11",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "4",

}

Azizie, K, Hensling, FVE, Gorsak, CA, Kim, Y, Pieczulewski, NA, Dryden, DM, Senevirathna, MKI, Coye, S, Shang, SL, Steele, J, Vogt, P, Parker, NA, Birkhölzer, YA, McCandless, JP, Jena, D, Xing, HG, Liu, ZK, Williams, MD, Green, AJ, Chabak, K, Muller, DA, Neal, AT, Mou, S, Thompson, MO, Nair, HP & Schlom, DG 2023, 'Silicon-doped β -Ga₂O₃films grown at 1 μ m/h by suboxide molecular-beam epitaxy', APL Materials, vol. 11, no. 4, 041102. https://doi.org/10.1063/5.0139622

TY - JOUR

T1 - Silicon-doped β -Ga2O3films grown at 1 μ m/h by suboxide molecular-beam epitaxy

AU - Azizie, Kathy

AU - Hensling, Felix V.E.

AU - Gorsak, Cameron A.

AU - Kim, Yunjo

AU - Pieczulewski, Naomi A.

AU - Dryden, Daniel M.

AU - Senevirathna, M. K.Indika

AU - Coye, Selena

AU - Shang, Shun Li

AU - Steele, Jacob

AU - Vogt, Patrick

AU - Parker, Nicholas A.

AU - Birkhölzer, Yorick A.

AU - McCandless, Jonathan P.

AU - Jena, Debdeep

AU - Xing, Huili G.

AU - Liu, Zi Kui

AU - Williams, Michael D.

AU - Green, Andrew J.

AU - Chabak, Kelson

AU - Muller, David A.

AU - Neal, Adam T.

AU - Mou, Shin

AU - Thompson, Michael O.

AU - Nair, Hari P.

AU - Schlom, Darrell G.

PY - 2023/4/1

Y1 - 2023/4/1

N2 - We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 μm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm-3. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98% Ga2O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of β-Ga2O3 by conventional MBE. As a result, a growth rate of ∼1 μm/h is readily achieved at a relatively low growth temperature (Tsub ≈ 525 °C), resulting in films with high structural perfection and smooth surfaces (rms roughness of <2 nm on ∼1 μm thick films). Silicon-containing oxide sources (SiO and SiO2) producing an SiO suboxide molecular beam are used to dope the β-Ga2O3 layers. Temperature-dependent Hall effect measurements on a 1 μm thick film with a mobile carrier concentration of 2.7 × 1017 cm-3 reveal a room-temperature mobility of 124 cm2 V-1 s-1 that increases to 627 cm2 V-1 s-1 at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working metal-semiconductor field-effect transistors made from these silicon-doped β-Ga2O3 films grown by S-MBE at growth rates of ∼1 μm/h.

AB - We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 μm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm-3. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98% Ga2O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of β-Ga2O3 by conventional MBE. As a result, a growth rate of ∼1 μm/h is readily achieved at a relatively low growth temperature (Tsub ≈ 525 °C), resulting in films with high structural perfection and smooth surfaces (rms roughness of <2 nm on ∼1 μm thick films). Silicon-containing oxide sources (SiO and SiO2) producing an SiO suboxide molecular beam are used to dope the β-Ga2O3 layers. Temperature-dependent Hall effect measurements on a 1 μm thick film with a mobile carrier concentration of 2.7 × 1017 cm-3 reveal a room-temperature mobility of 124 cm2 V-1 s-1 that increases to 627 cm2 V-1 s-1 at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working metal-semiconductor field-effect transistors made from these silicon-doped β-Ga2O3 films grown by S-MBE at growth rates of ∼1 μm/h.

UR - https://www.scopus.com/pages/publications/85152887176

U2 - 10.1063/5.0139622

DO - 10.1063/5.0139622

M3 - Article

AN - SCOPUS:85152887176

SN - 2166-532X

VL - 11

JO - APL Materials

JF - APL Materials

IS - 4

M1 - 041102

ER -

Silicon-doped β -Ga₂O₃films grown at 1 μ m/h by suboxide molecular-beam epitaxy

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