Silicon carbide/diamond heterostructure rectifying contacts

T. P. Humphreys; J. D. Hunn; B. K. Patnaik; N. R. Parikh; D. M. Malta; K. Das

doi:10.1049/el:19930893

Silicon carbide/diamond heterostructure rectifying contacts

T. P. Humphreys, J. D. Hunn, B. K. Patnaik, N. R. Parikh, D. M. Malta, K. Das

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The first results pertaining to the fabrication of an optically transparent SiC contact on naturally occurring semiconducting diamond C(001) substrates are reported. The SiC layer is formed by electron-beam evaporation of an Si film followed by a two-step high-temperature annealing process. By employing Al dots as a metal mask, mesa heterostructure diodes comprising Al/SiC/C(001) were fabricated by etching in an electron cyclotron resonance oxygen plasma. Rectifying I-V characteristics were obtained from the mesa heterostructures.

Original language	English
Pages (from-to)	1332-1334
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	15
DOIs	https://doi.org/10.1049/el:19930893
State	Published - Jul 1993
Externally published	Yes

Keywords

Rectification
Semiconductor junctions

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title = "Silicon carbide/diamond heterostructure rectifying contacts",

abstract = "The first results pertaining to the fabrication of an optically transparent SiC contact on naturally occurring semiconducting diamond C(001) substrates are reported. The SiC layer is formed by electron-beam evaporation of an Si film followed by a two-step high-temperature annealing process. By employing Al dots as a metal mask, mesa heterostructure diodes comprising Al/SiC/C(001) were fabricated by etching in an electron cyclotron resonance oxygen plasma. Rectifying I-V characteristics were obtained from the mesa heterostructures.",

keywords = "Rectification, Semiconductor junctions",

author = "Humphreys, {T. P.} and Hunn, {J. D.} and Patnaik, {B. K.} and Parikh, {N. R.} and Malta, {D. M.} and K. Das",

year = "1993",

month = jul,

doi = "10.1049/el:19930893",

language = "English",

volume = "29",

pages = "1332--1334",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley Open Access",

number = "15",

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TY - JOUR

T1 - Silicon carbide/diamond heterostructure rectifying contacts

AU - Humphreys, T. P.

AU - Hunn, J. D.

AU - Patnaik, B. K.

AU - Parikh, N. R.

AU - Malta, D. M.

AU - Das, K.

PY - 1993/7

Y1 - 1993/7

N2 - The first results pertaining to the fabrication of an optically transparent SiC contact on naturally occurring semiconducting diamond C(001) substrates are reported. The SiC layer is formed by electron-beam evaporation of an Si film followed by a two-step high-temperature annealing process. By employing Al dots as a metal mask, mesa heterostructure diodes comprising Al/SiC/C(001) were fabricated by etching in an electron cyclotron resonance oxygen plasma. Rectifying I-V characteristics were obtained from the mesa heterostructures.

AB - The first results pertaining to the fabrication of an optically transparent SiC contact on naturally occurring semiconducting diamond C(001) substrates are reported. The SiC layer is formed by electron-beam evaporation of an Si film followed by a two-step high-temperature annealing process. By employing Al dots as a metal mask, mesa heterostructure diodes comprising Al/SiC/C(001) were fabricated by etching in an electron cyclotron resonance oxygen plasma. Rectifying I-V characteristics were obtained from the mesa heterostructures.

KW - Rectification

KW - Semiconductor junctions

UR - http://www.scopus.com/inward/record.url?scp=0027633037&partnerID=8YFLogxK

U2 - 10.1049/el:19930893

DO - 10.1049/el:19930893

M3 - Article

AN - SCOPUS:0027633037

SN - 0013-5194

VL - 29

SP - 1332

EP - 1334

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Silicon carbide/diamond heterostructure rectifying contacts

Abstract

Keywords

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