Silicon carbide power device characterization for HEVs

Burak Ozpineci; Leon M. Tolbert; Syed K. Islam

doi:10.1109/PET.2002.1185555

Silicon carbide power device characterization for HEVs

Burak Ozpineci, Leon M. Tolbert, Syed K. Islam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

The emergence of silicon carbide-(SiC-) based power semiconductor switches, with their superior features compared with silicon-(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, are discussed.

Original language	English
Title of host publication	IEEE Power Electronics in Transportation, PET 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-97
Number of pages	5
ISBN (Electronic)	0780374924
DOIs	https://doi.org/10.1109/PET.2002.1185555
State	Published - 2002
Externally published	Yes
Event	IEEE Workshop on Power Electronics in Transportation, PET 2002 - Auburn Hills, United States Duration: Oct 24 2002 → Oct 25 2002

Publication series

Name	IEEE Workshop on Power Electronics in Transportation
Volume	2002-January

Conference

Conference	IEEE Workshop on Power Electronics in Transportation, PET 2002
Country/Territory	United States
City	Auburn Hills
Period	10/24/02 → 10/25/02

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PET.2002.1185555

Cite this

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title = "Silicon carbide power device characterization for HEVs",

abstract = "The emergence of silicon carbide-(SiC-) based power semiconductor switches, with their superior features compared with silicon-(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, are discussed.",

author = "Burak Ozpineci and Tolbert, {Leon M.} and Islam, {Syed K.}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; IEEE Workshop on Power Electronics in Transportation, PET 2002 ; Conference date: 24-10-2002 Through 25-10-2002",

year = "2002",

doi = "10.1109/PET.2002.1185555",

language = "English",

series = "IEEE Workshop on Power Electronics in Transportation",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "93--97",

booktitle = "IEEE Power Electronics in Transportation, PET 2002",

}

Ozpineci, B, Tolbert, LM & Islam, SK 2002, Silicon carbide power device characterization for HEVs. in IEEE Power Electronics in Transportation, PET 2002., 1185555, IEEE Workshop on Power Electronics in Transportation, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 93-97, IEEE Workshop on Power Electronics in Transportation, PET 2002, Auburn Hills, United States, 10/24/02. https://doi.org/10.1109/PET.2002.1185555

Silicon carbide power device characterization for HEVs. / Ozpineci, Burak; Tolbert, Leon M.; Islam, Syed K.
IEEE Power Electronics in Transportation, PET 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 93-97 1185555 (IEEE Workshop on Power Electronics in Transportation; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Silicon carbide power device characterization for HEVs

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AU - Tolbert, Leon M.

AU - Islam, Syed K.

PY - 2002

Y1 - 2002

N2 - The emergence of silicon carbide-(SiC-) based power semiconductor switches, with their superior features compared with silicon-(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, are discussed.

AB - The emergence of silicon carbide-(SiC-) based power semiconductor switches, with their superior features compared with silicon-(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, are discussed.

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DO - 10.1109/PET.2002.1185555

M3 - Conference contribution

AN - SCOPUS:33745908543

T3 - IEEE Workshop on Power Electronics in Transportation

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EP - 97

BT - IEEE Power Electronics in Transportation, PET 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Workshop on Power Electronics in Transportation, PET 2002

Y2 - 24 October 2002 through 25 October 2002

ER -

Silicon carbide power device characterization for HEVs

Abstract

Publication series

Conference

UN SDGs

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