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Silicon carbide oxidation in steam up to 2 MPa
Kurt A. Terrani
, Bruce A. Pint
,
Chad M. Parish
, Chinthaka M. Silva
, Lance L. Snead
,
Yutai Katoh
Materials Science and Technology Div
Applied Microanalysis and Thermophysics
Research output
:
Contribution to journal
›
Article
›
peer-review
273
Scopus citations
Overview
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Material Science
Oxidation Reaction
100%
Silicon Carbide
100%
Composite Material
100%
Surface (Surface Science)
100%
Oxide Compound
66%
X Ray Diffraction Analysis
33%
Electron Microscopy
33%
Engineering
Vaporization
100%
Silicon Dioxide
66%
Flow Velocity
66%
Oxide Scale
33%
Pressure Steam
33%
Arrhenius
33%
Environmental Parameter
33%
Interface Layer
33%
Partial Pressure
33%
Porosity
33%
Rate Constant
33%