Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

C. L. Hsieh; J. Haskovec; T. N. Carlstrom; J. C. DeBoo; C. M. Greenfield; R. T. Snider; P. Trost

doi:10.1063/1.1141805

Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

C. L. Hsieh, J. Haskovec, T. N. Carlstrom, J. C. DeBoo, C. M. Greenfield, R. T. Snider, P. Trost

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36 Scopus citations

Abstract

A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z_eff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

Original language	English
Pages (from-to)	2855-2857
Number of pages	3
Journal	Review of Scientific Instruments
Volume	61
Issue number	10
DOIs	https://doi.org/10.1063/1.1141805
State	Published - 1990
Externally published	Yes

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title = "Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering",

abstract = "A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Zeff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.",

author = "Hsieh, {C. L.} and J. Haskovec and Carlstrom, {T. N.} and DeBoo, {J. C.} and Greenfield, {C. M.} and Snider, {R. T.} and P. Trost",

year = "1990",

doi = "10.1063/1.1141805",

language = "English",

volume = "61",

pages = "2855--2857",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

AU - Hsieh, C. L.

AU - Haskovec, J.

AU - Carlstrom, T. N.

AU - DeBoo, J. C.

AU - Greenfield, C. M.

AU - Snider, R. T.

AU - Trost, P.

PY - 1990

Y1 - 1990

N2 - A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Zeff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

AB - A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Zeff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

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U2 - 10.1063/1.1141805

DO - 10.1063/1.1141805

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SP - 2855

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JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 10

ER -

Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

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