TY - GEN
T1 - Silicide formation by pulsed excimer laser annealing
AU - Lew, Connie
AU - Thompson, Michael O.
PY - 2001
Y1 - 2001
N2 - Silicide formation may occur at the interface of metal and a-Si films upon annealing with a pulsed excimer laser (XeCl 308 nm; 30 ns). During laser-induced melting, the melt front reaches the Si/metal interface, where liquid phase kinetics allow reaction to occur to form a silicide, despite the <100 ns time-scale. It is thought that silicide reaction would occur if T M. metal ≈ TM.a-si (1480 ± 50K). The a-Si/metal film stacks that have been investigated include a-Si/Al/Cr, a-Si/Ti, and a-Si/W on thermally oxidized Si. Samples were laser-annealed at varying energy densities in order to determine the onset of melt, and the fluence at which Si/metal interface reaction and film ablation occurs. Rutherford backscattering (RBS), optical inspection, cross-sectional scanning transmission electron microscopy (STEM), as well as parallel and serial electron energy loss spectroscopy (EELS) were used to analyze the films. For the a-Si/Al/Cr and a-Si/W films, no reaction is observed at the Si/metal interface. With a-Si/Ti, intermixing of Si and Ti at the interface is observed, as indicated by RBS and parallel EELS analysis. Laser annealing at higher fluences and further characterization is needed to determine if this mechanism does allow for silicide reaction to take place.
AB - Silicide formation may occur at the interface of metal and a-Si films upon annealing with a pulsed excimer laser (XeCl 308 nm; 30 ns). During laser-induced melting, the melt front reaches the Si/metal interface, where liquid phase kinetics allow reaction to occur to form a silicide, despite the <100 ns time-scale. It is thought that silicide reaction would occur if T M. metal ≈ TM.a-si (1480 ± 50K). The a-Si/metal film stacks that have been investigated include a-Si/Al/Cr, a-Si/Ti, and a-Si/W on thermally oxidized Si. Samples were laser-annealed at varying energy densities in order to determine the onset of melt, and the fluence at which Si/metal interface reaction and film ablation occurs. Rutherford backscattering (RBS), optical inspection, cross-sectional scanning transmission electron microscopy (STEM), as well as parallel and serial electron energy loss spectroscopy (EELS) were used to analyze the films. For the a-Si/Al/Cr and a-Si/W films, no reaction is observed at the Si/metal interface. With a-Si/Ti, intermixing of Si and Ti at the interface is observed, as indicated by RBS and parallel EELS analysis. Laser annealing at higher fluences and further characterization is needed to determine if this mechanism does allow for silicide reaction to take place.
UR - https://www.scopus.com/pages/publications/34249872186
U2 - 10.1557/proc-685-d5.22.1
DO - 10.1557/proc-685-d5.22.1
M3 - Conference contribution
AN - SCOPUS:34249872186
SN - 1558996214
SN - 9781558996212
T3 - Materials Research Society Symposium Proceedings
SP - 192
EP - 197
BT - Advanced Materials and Devices for Large-Area Electronics
PB - Materials Research Society
T2 - 2001 MRS Spring Meeting
Y2 - 16 April 2001 through 20 April 2001
ER -