SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems

Emre Gurpinar; Randy Wiles; Burak Ozpineci; Tsarafidy Raminosoa; Feng Zhou; Yanghe Liu; Ercan M. Dede

doi:10.1109/ECCE.2018.8557609

SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems

Emre Gurpinar, Randy Wiles, Burak Ozpineci, Tsarafidy Raminosoa, Feng Zhou, Yanghe Liu, Ercan M. Dede

Buildings and Transportation Science Div

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

Wide bandgap (WBG) power semiconductor devices, specifically silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained attention from electric vehicle (EV) system developers due to well-known superior properties in comparison to industry standard silicon (Si) based MOSFETs and insulated-gate bipolar transistors (IGBTs). In this work, a power module design based on SiC MOSFETs in a segmented two-level, three-phase inverter topology with 125 kW peak output power and 30 kHz switching frequency is presented. Three different SiC MOSFET die options are analyzed according to experimentally obtained operating conditions of a commercial EV traction system. Substrate design of the power module for multi-die layout, heat sink design, and integration of a segmented phase leg module are presented. Finite-element electrical and thermal analysis of the proposed system are presented and discussed.

Original language	English
Title of host publication	2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1722-1727
Number of pages	6
ISBN (Electronic)	9781479973118
DOIs	https://doi.org/10.1109/ECCE.2018.8557609
State	Published - Dec 3 2018
Event	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States Duration: Sep 23 2018 → Sep 27 2018

Publication series

Name	2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

Conference

Conference	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
Country/Territory	United States
City	Portland
Period	09/23/18 → 09/27/18

Funding

This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC0500OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

Funders	Funder number
Toyota Motor Engineering and Manufacturing North America, Inc.
Toyota Research Institute of North America

Keywords

Electric vehicles
Segmented inverter
SiC MOSFET
Traction systems
Wide bandgap power devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ECCE.2018.8557609

Cite this

Gurpinar, E., Wiles, R., Ozpineci, B., Raminosoa, T., Zhou, F., Liu, Y., & Dede, E. M. (2018). SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems. In 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018 (pp. 1722-1727). Article 8557609 (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2018.8557609

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title = "SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems",

abstract = "Wide bandgap (WBG) power semiconductor devices, specifically silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained attention from electric vehicle (EV) system developers due to well-known superior properties in comparison to industry standard silicon (Si) based MOSFETs and insulated-gate bipolar transistors (IGBTs). In this work, a power module design based on SiC MOSFETs in a segmented two-level, three-phase inverter topology with 125 kW peak output power and 30 kHz switching frequency is presented. Three different SiC MOSFET die options are analyzed according to experimentally obtained operating conditions of a commercial EV traction system. Substrate design of the power module for multi-die layout, heat sink design, and integration of a segmented phase leg module are presented. Finite-element electrical and thermal analysis of the proposed system are presented and discussed.",

keywords = "Electric vehicles, Segmented inverter, SiC MOSFET, Traction systems, Wide bandgap power devices",

author = "Emre Gurpinar and Randy Wiles and Burak Ozpineci and Tsarafidy Raminosoa and Feng Zhou and Yanghe Liu and Dede, {Ercan M.}",

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doi = "10.1109/ECCE.2018.8557609",

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Gurpinar, E, Wiles, R, Ozpineci, B, Raminosoa, T, Zhou, F, Liu, Y & Dede, EM 2018, SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems. in 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018., 8557609, 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1722-1727, 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018, Portland, United States, 09/23/18. https://doi.org/10.1109/ECCE.2018.8557609

SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems. / Gurpinar, Emre; Wiles, Randy; Ozpineci, Burak et al.
2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1722-1727 8557609 (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems

AU - Gurpinar, Emre

AU - Wiles, Randy

AU - Ozpineci, Burak

AU - Raminosoa, Tsarafidy

AU - Zhou, Feng

AU - Liu, Yanghe

AU - Dede, Ercan M.

PY - 2018/12/3

Y1 - 2018/12/3

N2 - Wide bandgap (WBG) power semiconductor devices, specifically silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained attention from electric vehicle (EV) system developers due to well-known superior properties in comparison to industry standard silicon (Si) based MOSFETs and insulated-gate bipolar transistors (IGBTs). In this work, a power module design based on SiC MOSFETs in a segmented two-level, three-phase inverter topology with 125 kW peak output power and 30 kHz switching frequency is presented. Three different SiC MOSFET die options are analyzed according to experimentally obtained operating conditions of a commercial EV traction system. Substrate design of the power module for multi-die layout, heat sink design, and integration of a segmented phase leg module are presented. Finite-element electrical and thermal analysis of the proposed system are presented and discussed.

AB - Wide bandgap (WBG) power semiconductor devices, specifically silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained attention from electric vehicle (EV) system developers due to well-known superior properties in comparison to industry standard silicon (Si) based MOSFETs and insulated-gate bipolar transistors (IGBTs). In this work, a power module design based on SiC MOSFETs in a segmented two-level, three-phase inverter topology with 125 kW peak output power and 30 kHz switching frequency is presented. Three different SiC MOSFET die options are analyzed according to experimentally obtained operating conditions of a commercial EV traction system. Substrate design of the power module for multi-die layout, heat sink design, and integration of a segmented phase leg module are presented. Finite-element electrical and thermal analysis of the proposed system are presented and discussed.

KW - Electric vehicles

KW - Segmented inverter

KW - SiC MOSFET

KW - Traction systems

KW - Wide bandgap power devices

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BT - 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 23 September 2018 through 27 September 2018

ER -

Gurpinar E, Wiles R, Ozpineci B, Raminosoa T, Zhou F, Liu Y et al. SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems. In 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1722-1727. 8557609. (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018). doi: 10.1109/ECCE.2018.8557609

SiC MOSFET-Based Power Module Design and Analysis for EV Traction Systems

Abstract

Publication series

Conference

Funding

Keywords

UN SDGs

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