SiC-based power converters for high temperature applications

Leon M. Tolbert, Hui Zhang, M. Adhu S. Chinthavali, Burak Ozpineci

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

As commercial-grade silicon carbide (SiC) power electronics devices become available, the application of these devices at higher temperatures or frequencies has gained interest. This paper contains temperature-dependent loss models for SiC diodes and JFETs and simulations for different power converters that are useful for predicting the efficiency of these converters. Additionally, tests to characterize the static and dynamic performance of some available devices are presented to give further insight into the advantages that might be gained from using SiC devices instead of Si devices for hybrid electric vehicle applications.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages965-970
Number of pages6
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
StatePublished - 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 - Newcastle upon Tyne, United Kingdom
Duration: Sep 3 2006Sep 7 2006

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
Country/TerritoryUnited Kingdom
CityNewcastle upon Tyne
Period09/3/0609/7/06

Keywords

  • Converter
  • High temperature
  • Hybrid electric vehicle
  • Inverter

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