@inproceedings{89167c8de2794e35bbeeaf93336ced7a,
title = "SiC-based power converters for high temperature applications",
abstract = "As commercial-grade silicon carbide (SiC) power electronics devices become available, the application of these devices at higher temperatures or frequencies has gained interest. This paper contains temperature-dependent loss models for SiC diodes and JFETs and simulations for different power converters that are useful for predicting the efficiency of these converters. Additionally, tests to characterize the static and dynamic performance of some available devices are presented to give further insight into the advantages that might be gained from using SiC devices instead of Si devices for hybrid electric vehicle applications.",
keywords = "Converter, High temperature, Hybrid electric vehicle, Inverter",
author = "Tolbert, {Leon M.} and Hui Zhang and Chinthavali, {M. Adhu S.} and Burak Ozpineci",
note = "Publisher Copyright: {\textcopyright} (2007) Trans Tech Publications, Switzerland.; 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 ; Conference date: 03-09-2006 Through 07-09-2006",
year = "2007",
doi = "10.4028/www.scientific.net/MSF.556-557.965",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "965--970",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
}