TY - GEN
T1 - SiC-based power converters
AU - Tolbert, Leon
AU - Zhang, Hui
AU - Ozpineci, Burak
AU - Chinthavali, Madhu S.
PY - 2008
Y1 - 2008
N2 - The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort at Oak Ridge National Laboratory (ORNL) and The University of Tennessee (UT) is presented in this paper.
AB - The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort at Oak Ridge National Laboratory (ORNL) and The University of Tennessee (UT) is presented in this paper.
UR - http://www.scopus.com/inward/record.url?scp=55849132956&partnerID=8YFLogxK
U2 - 10.1557/proc-1069-d12-01
DO - 10.1557/proc-1069-d12-01
M3 - Conference contribution
AN - SCOPUS:55849132956
SN - 9781605110394
T3 - Materials Research Society Symposium Proceedings
SP - 221
EP - 232
BT - Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices
PB - Materials Research Society
T2 - Silicon Carbide 2008 - Materials, Processing and Devices
Y2 - 25 March 2008 through 27 March 2008
ER -