SiC as a core-edge integrated wall solution in DIII-D

S. Zamperini, T. Abrams, J. Nichols, E. Unterberg, A. Lasa, P. Stangeby, S. Bringuier, D. Rudakov, J. D. Elder

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2]. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Zeff, across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Zeff, potentially by as much as ∼50 %. It is discussed how SiC may be expected to “self-condition” and create wall conditions similar to siliconization, further lowering Zeff due to efficient oxygen gettering. The potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

Original languageEnglish
Article number101535
JournalNuclear Materials and Energy
Volume37
DOIs
StatePublished - Dec 2023

Funding

This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences, using the DIII-D National Fusion Facility, a DOE Office of Science user facility, under Awards DE-FC02-04ER54698, DE-FG02-07ER54917 and DE-AC05-00OR22725. Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

FundersFunder number
DOE Office of Science user facilityDE-AC05-00OR22725, DE-FC02-04ER54698, DE-FG02-07ER54917
United States Government
U.S. Department of Energy
Office of Science
Fusion Energy Sciences

    Keywords

    • DIII-D
    • DIVIMP
    • impurity transport
    • nuclear fusion
    • silicon carbide
    • wall conditioning

    Fingerprint

    Dive into the research topics of 'SiC as a core-edge integrated wall solution in DIII-D'. Together they form a unique fingerprint.

    Cite this