Si(313)12 × 1: Another metallic stable surface of silicon having a complex reconstructed layer

Zheng Gai; R. G. Zhao; T. Sakurai; W. S. Yang

doi:10.1103/PhysRevB.63.085301

Si(313)12 × 1: Another metallic stable surface of silicon having a complex reconstructed layer

Zheng Gai, R. G. Zhao, T. Sakurai, W. S. Yang

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

By means of scanning tunneling microscopy, the Si(313) 12 × 1 surface has been found to be, after Si (111) 7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.63.085301
State	Published - Jan 23 2001
Externally published	Yes

Access to Document

10.1103/PhysRevB.63.085301

Cite this

@article{7cfbf510afc64848992f15cfa568874c,

title = "Si(313)12 × 1: Another metallic stable surface of silicon having a complex reconstructed layer",

abstract = "By means of scanning tunneling microscopy, the Si(313) 12 × 1 surface has been found to be, after Si (111) 7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.",

author = "Zheng Gai and Zhao, \{R. G.\} and T. Sakurai and Yang, \{W. S.\}",

year = "2001",

month = jan,

day = "23",

doi = "10.1103/PhysRevB.63.085301",

language = "English",

volume = "63",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Si(313)12 × 1

T2 - Another metallic stable surface of silicon having a complex reconstructed layer

AU - Gai, Zheng

AU - Zhao, R. G.

AU - Sakurai, T.

AU - Yang, W. S.

PY - 2001/1/23

Y1 - 2001/1/23

N2 - By means of scanning tunneling microscopy, the Si(313) 12 × 1 surface has been found to be, after Si (111) 7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

AB - By means of scanning tunneling microscopy, the Si(313) 12 × 1 surface has been found to be, after Si (111) 7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

UR - https://www.scopus.com/pages/publications/85038972830

U2 - 10.1103/PhysRevB.63.085301

DO - 10.1103/PhysRevB.63.085301

M3 - Article

AN - SCOPUS:85038972830

SN - 1098-0121

VL - 63

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

ER -

Si(313)12 × 1: Another metallic stable surface of silicon having a complex reconstructed layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this