Abstract
By means of scanning tunneling microscopy, the Si(313)12×1 surface has been found to be, after Si(111)7 ×7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.
| Original language | English |
|---|---|
| Article number | 085301 |
| Pages (from-to) | 853011-853016 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 63 |
| Issue number | 8 |
| State | Published - 2001 |