Si indiffusion on Ge(100)-(2×1) studied by core-level photoemission

D. S. Lin, T. Miller, T. C. Chiang

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Core-level photoemission spectroscopy has been utilized to study the adsorption and growth of Si on Ge(100)-(2×1) by molecular-beam epitaxy. The populations of Si and Ge atoms in the surface are monitored by measuring the intensities of the surface-shifted Si and Ge core-level components. After several atomic layers of Si are deposited on Ge(100) at a growth temperature of 450 C, the top layer which forms the (2×1) reconstruction consists of Ge atoms only. This tendency for Si atoms to move below the surface persists even for growth at about room temperature.

Original languageEnglish
Pages (from-to)11415-11418
Number of pages4
JournalPhysical Review B
Volume45
Issue number19
DOIs
StatePublished - 1992
Externally publishedYes

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