Abstract
Core-level photoemission spectroscopy has been utilized to study the adsorption and growth of Si on Ge(100)-(2×1) by molecular-beam epitaxy. The populations of Si and Ge atoms in the surface are monitored by measuring the intensities of the surface-shifted Si and Ge core-level components. After several atomic layers of Si are deposited on Ge(100) at a growth temperature of 450 C, the top layer which forms the (2×1) reconstruction consists of Ge atoms only. This tendency for Si atoms to move below the surface persists even for growth at about room temperature.
Original language | English |
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Pages (from-to) | 11415-11418 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 45 |
Issue number | 19 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |