Short range order variations in amorphous silicon

J. Fortner; J. S. Lannin

doi:10.1016/0022-3093(88)90245-1

Short range order variations in amorphous silicon

J. Fortner, J. S. Lannin

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Neutron diffraction measurements have been performed on two forms of amorphous Si prepared by low pressure rf sputtering and by subsequent annealing at 600C. Radial distribution studies on thick films indicate substantial changes in the second peak due to structural relaxation effects. Raman scattering measurements on these samples provide the first direct comparison between indirect and direct probes of bond angle disorder and its variation in the amorphous states of tetrahedral group IV systems.

Original language	English
Pages (from-to)	128-131
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	106
Issue number	1-3
DOIs	https://doi.org/10.1016/0022-3093(88)90245-1
State	Published - Dec 1 1988
Externally published	Yes

Funding

*Supported by NSF Grant DRM 8630391

Funders	Funder number
National Science Foundation	DRM 8630391

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/0022-3093(88)90245-1

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title = "Short range order variations in amorphous silicon",

abstract = "Neutron diffraction measurements have been performed on two forms of amorphous Si prepared by low pressure rf sputtering and by subsequent annealing at 600C. Radial distribution studies on thick films indicate substantial changes in the second peak due to structural relaxation effects. Raman scattering measurements on these samples provide the first direct comparison between indirect and direct probes of bond angle disorder and its variation in the amorphous states of tetrahedral group IV systems.",

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AU - Lannin, J. S.

PY - 1988/12/1

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N2 - Neutron diffraction measurements have been performed on two forms of amorphous Si prepared by low pressure rf sputtering and by subsequent annealing at 600C. Radial distribution studies on thick films indicate substantial changes in the second peak due to structural relaxation effects. Raman scattering measurements on these samples provide the first direct comparison between indirect and direct probes of bond angle disorder and its variation in the amorphous states of tetrahedral group IV systems.

AB - Neutron diffraction measurements have been performed on two forms of amorphous Si prepared by low pressure rf sputtering and by subsequent annealing at 600C. Radial distribution studies on thick films indicate substantial changes in the second peak due to structural relaxation effects. Raman scattering measurements on these samples provide the first direct comparison between indirect and direct probes of bond angle disorder and its variation in the amorphous states of tetrahedral group IV systems.

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DO - 10.1016/0022-3093(88)90245-1

M3 - Article

AN - SCOPUS:0024124088

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VL - 106

SP - 128

EP - 131

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-3

ER -

Short range order variations in amorphous silicon

Abstract

Funding

UN SDGs

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