Shock-induced amorphization in silicon carbide

S. Zhao; R. Flanagan; E. N. Hahn; B. Kad; B. A. Remington; C. E. Wehrenberg; R. Cauble; K. More; M. A. Meyers

doi:10.1016/j.actamat.2018.07.047

Shock-induced amorphization in silicon carbide

S. Zhao, R. Flanagan, E. N. Hahn, B. Kad, B. A. Remington, C. E. Wehrenberg, R. Cauble, K. More, M. A. Meyers

Center for Nanophase Matls Sciences

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

While silicon carbide (SiC) has been predicted to undergo pressure-induced amorphization, the microstructural evidence of such a drastic phase change is absent as its brittleness usually prevents its successful recovery from high-pressure experiments. Here we report on the observation of amorphous SiC recovered from laser-ablation-driven shock compression with a peak stress of approximately 50 GPa. Transmission electron microscopy reveals that the amorphous regions are extremely localized, forming bands as narrow as a few nanometers. In addition to these amorphous bands, planar stacking faults are observed. Large-scale non-equilibrium molecular dynamic simulations elucidate the process and suggest that the planar stacking faults serve as the precursors to amorphization. Our results suggest that the amorphous phase produced is a high-density form, which enhances its thermodynamical stability under the high pressures combined with the shear stresses generated by the uniaxial strain state in shock compression.

Original language	English
Pages (from-to)	206-213
Number of pages	8
Journal	Acta Materialia
Volume	158
DOIs	https://doi.org/10.1016/j.actamat.2018.07.047
State	Published - Oct 1 2018

Funding

This research is funded by a UC Research Laboratories Grant ( 09-LR-06-118456-MEYM ), a National Laser Users Facility (NLUF) Grant ( PE-FG52-09NA-29043 ), a University of California Office of the President Laboratory Fees Research Program ( LFR-17-449059 ), a National Nuclear Security Administration (NNSA) Grant ( DE-NA0002930 ) and was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 . We acknowledge the highly professional support team of the Jupiter laser facility at Lawrence Livermore National Laboratory. Electron microscopy was conducted at CNMS User Facility, Oak Ridge National Laboratory, which is sponsored by the Office of Basic Energy Science, US. Department of Energy.

Keywords

Amorphization
Laser shock compression
Silicon carbide

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10.1016/j.actamat.2018.07.047

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title = "Shock-induced amorphization in silicon carbide",

abstract = "While silicon carbide (SiC) has been predicted to undergo pressure-induced amorphization, the microstructural evidence of such a drastic phase change is absent as its brittleness usually prevents its successful recovery from high-pressure experiments. Here we report on the observation of amorphous SiC recovered from laser-ablation-driven shock compression with a peak stress of approximately 50 GPa. Transmission electron microscopy reveals that the amorphous regions are extremely localized, forming bands as narrow as a few nanometers. In addition to these amorphous bands, planar stacking faults are observed. Large-scale non-equilibrium molecular dynamic simulations elucidate the process and suggest that the planar stacking faults serve as the precursors to amorphization. Our results suggest that the amorphous phase produced is a high-density form, which enhances its thermodynamical stability under the high pressures combined with the shear stresses generated by the uniaxial strain state in shock compression.",

keywords = "Amorphization, Laser shock compression, Silicon carbide",

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AU - Zhao, S.

AU - Flanagan, R.

AU - Hahn, E. N.

AU - Kad, B.

AU - Remington, B. A.

AU - Wehrenberg, C. E.

AU - Cauble, R.

AU - More, K.

AU - Meyers, M. A.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - While silicon carbide (SiC) has been predicted to undergo pressure-induced amorphization, the microstructural evidence of such a drastic phase change is absent as its brittleness usually prevents its successful recovery from high-pressure experiments. Here we report on the observation of amorphous SiC recovered from laser-ablation-driven shock compression with a peak stress of approximately 50 GPa. Transmission electron microscopy reveals that the amorphous regions are extremely localized, forming bands as narrow as a few nanometers. In addition to these amorphous bands, planar stacking faults are observed. Large-scale non-equilibrium molecular dynamic simulations elucidate the process and suggest that the planar stacking faults serve as the precursors to amorphization. Our results suggest that the amorphous phase produced is a high-density form, which enhances its thermodynamical stability under the high pressures combined with the shear stresses generated by the uniaxial strain state in shock compression.

AB - While silicon carbide (SiC) has been predicted to undergo pressure-induced amorphization, the microstructural evidence of such a drastic phase change is absent as its brittleness usually prevents its successful recovery from high-pressure experiments. Here we report on the observation of amorphous SiC recovered from laser-ablation-driven shock compression with a peak stress of approximately 50 GPa. Transmission electron microscopy reveals that the amorphous regions are extremely localized, forming bands as narrow as a few nanometers. In addition to these amorphous bands, planar stacking faults are observed. Large-scale non-equilibrium molecular dynamic simulations elucidate the process and suggest that the planar stacking faults serve as the precursors to amorphization. Our results suggest that the amorphous phase produced is a high-density form, which enhances its thermodynamical stability under the high pressures combined with the shear stresses generated by the uniaxial strain state in shock compression.

KW - Amorphization

KW - Laser shock compression

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JO - Acta Materialia

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ER -

Shock-induced amorphization in silicon carbide

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Keywords

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