Shallow junction formation using diffusion from self-aligned silicides

H. Jiang; C. M. Osburn; Z. G. Xiao; G. McGuire; G. A. Rozgonyi

Shallow junction formation using diffusion from self-aligned silicides

H. Jiang, C. M. Osburn, Z. G. Xiao, G. McGuire, G. A. Rozgonyi

Single Crystal Diffraction

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Several issues associated with the Silicide-As-Diffusion-Source (SADS) process were studied for ultra shallow junction fabrication using TiSi₂, CoSi₂, NiSi, Pd₂Si and PtSi. It was found that grain boundary diffusion in the silicides in combination with a high implant dose may be effective in supplying dopant to the silicide/silicon interface, to thereby maintain a high interface concentration. The diffusion of both boron and arsenic from silicide into silicon was seen to be enhanced over conventional diffusion in Si. The stability time limit was found to have an activation energy of approximately 5 eV in CoSi₂, 3.5eV in TiSi₂ and 3.1 eV in PtSi. All SADS diodes except TiS₂ As⁺, or CoSi₂ and PtSi B⁺ junctions showed high reverse current.

Original language	English
Pages (from-to)	862-875
Number of pages	14
Journal	Proceedings - The Electrochemical Society
Volume	90
Issue number	7
State	Published - 1990
Event	Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology - Montreal, Que, Can Duration: May 7 1990 → May 11 1990

Cite this

@article{8b8ae3f38a8d4575ad857331e2f3cff9,

title = "Shallow junction formation using diffusion from self-aligned silicides",

abstract = "Several issues associated with the Silicide-As-Diffusion-Source (SADS) process were studied for ultra shallow junction fabrication using TiSi2, CoSi2, NiSi, Pd2Si and PtSi. It was found that grain boundary diffusion in the silicides in combination with a high implant dose may be effective in supplying dopant to the silicide/silicon interface, to thereby maintain a high interface concentration. The diffusion of both boron and arsenic from silicide into silicon was seen to be enhanced over conventional diffusion in Si. The stability time limit was found to have an activation energy of approximately 5 eV in CoSi2, 3.5eV in TiSi2 and 3.1 eV in PtSi. All SADS diodes except TiS2 As+, or CoSi2 and PtSi B+ junctions showed high reverse current.",

author = "H. Jiang and Osburn, \{C. M.\} and Xiao, \{Z. G.\} and G. McGuire and Rozgonyi, \{G. A.\}",

year = "1990",

language = "English",

volume = "90",

pages = "862--875",

journal = "Proceedings - The Electrochemical Society",

issn = "0161-6374",

number = "7",

note = "Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology ; Conference date: 07-05-1990 Through 11-05-1990",

}

TY - JOUR

T1 - Shallow junction formation using diffusion from self-aligned silicides

AU - Jiang, H.

AU - Osburn, C. M.

AU - Xiao, Z. G.

AU - McGuire, G.

AU - Rozgonyi, G. A.

PY - 1990

Y1 - 1990

N2 - Several issues associated with the Silicide-As-Diffusion-Source (SADS) process were studied for ultra shallow junction fabrication using TiSi2, CoSi2, NiSi, Pd2Si and PtSi. It was found that grain boundary diffusion in the silicides in combination with a high implant dose may be effective in supplying dopant to the silicide/silicon interface, to thereby maintain a high interface concentration. The diffusion of both boron and arsenic from silicide into silicon was seen to be enhanced over conventional diffusion in Si. The stability time limit was found to have an activation energy of approximately 5 eV in CoSi2, 3.5eV in TiSi2 and 3.1 eV in PtSi. All SADS diodes except TiS2 As+, or CoSi2 and PtSi B+ junctions showed high reverse current.

AB - Several issues associated with the Silicide-As-Diffusion-Source (SADS) process were studied for ultra shallow junction fabrication using TiSi2, CoSi2, NiSi, Pd2Si and PtSi. It was found that grain boundary diffusion in the silicides in combination with a high implant dose may be effective in supplying dopant to the silicide/silicon interface, to thereby maintain a high interface concentration. The diffusion of both boron and arsenic from silicide into silicon was seen to be enhanced over conventional diffusion in Si. The stability time limit was found to have an activation energy of approximately 5 eV in CoSi2, 3.5eV in TiSi2 and 3.1 eV in PtSi. All SADS diodes except TiS2 As+, or CoSi2 and PtSi B+ junctions showed high reverse current.

UR - https://www.scopus.com/pages/publications/0025628247

M3 - Conference article

AN - SCOPUS:0025628247

SN - 0161-6374

VL - 90

SP - 862

EP - 875

JO - Proceedings - The Electrochemical Society

JF - Proceedings - The Electrochemical Society

IS - 7

T2 - Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology

Y2 - 7 May 1990 through 11 May 1990

ER -

Shallow junction formation using diffusion from self-aligned silicides

Abstract

Other files and links

Fingerprint

Cite this