Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirring

Xianghong Wang; Nancy Ma; David F. Bliss; Gerald W. Iseler

doi:10.2514/6.2005-916

Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirring

Xianghong Wang, Nancy Ma, David F. Bliss, Gerald W. Iseler

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The application of EM stirring provides a significant convective dopant transport in the melt so that the crystal solidifies with relatively good radial homogeneity. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

Original language	English
Pages	14675-14685
Number of pages	11
DOIs	https://doi.org/10.2514/6.2005-916
State	Published - 2005
Externally published	Yes
Event	43rd AIAA Aerospace Sciences Meeting and Exhibit - Reno, NV, United States Duration: Jan 10 2005 → Jan 13 2005

Conference

Conference	43rd AIAA Aerospace Sciences Meeting and Exhibit
Country/Territory	United States
City	Reno, NV
Period	01/10/05 → 01/13/05

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10.2514/6.2005-916

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title = "Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirring",

abstract = "This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The application of EM stirring provides a significant convective dopant transport in the melt so that the crystal solidifies with relatively good radial homogeneity. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.",

author = "Xianghong Wang and Nancy Ma and Bliss, {David F.} and Iseler, {Gerald W.}",

year = "2005",

doi = "10.2514/6.2005-916",

language = "English",

pages = "14675--14685",

note = "43rd AIAA Aerospace Sciences Meeting and Exhibit ; Conference date: 10-01-2005 Through 13-01-2005",

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TY - CONF

T1 - Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirring

AU - Wang, Xianghong

AU - Ma, Nancy

AU - Bliss, David F.

AU - Iseler, Gerald W.

PY - 2005

Y1 - 2005

N2 - This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The application of EM stirring provides a significant convective dopant transport in the melt so that the crystal solidifies with relatively good radial homogeneity. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

AB - This paper presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a steady axial magnetic field and a steady radial electric current. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The application of EM stirring provides a significant convective dopant transport in the melt so that the crystal solidifies with relatively good radial homogeneity. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

UR - http://www.scopus.com/inward/record.url?scp=30744439282&partnerID=8YFLogxK

U2 - 10.2514/6.2005-916

DO - 10.2514/6.2005-916

M3 - Paper

AN - SCOPUS:30744439282

SP - 14675

EP - 14685

T2 - 43rd AIAA Aerospace Sciences Meeting and Exhibit

Y2 - 10 January 2005 through 13 January 2005

ER -

Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirring

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