Selective Purcell enhancement of defect emission in ZnO thin films

B. J. Lawrie; R. Mu; R. F. Haglund

doi:10.1364/OL.37.001538

Selective Purcell enhancement of defect emission in ZnO thin films

B. J. Lawrie
, R. Mu
, R. F. Haglund

Quantum Heterostructures

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.

Original language	English
Pages (from-to)	1538-1540
Number of pages	3
Journal	Optics Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1364/OL.37.001538
State	Published - May 1 2012

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abstract = "A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.",

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AU - Mu, R.

AU - Haglund, R. F.

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N2 - A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.

AB - A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.

UR - https://www.scopus.com/pages/publications/84862114545

U2 - 10.1364/OL.37.001538

DO - 10.1364/OL.37.001538

M3 - Article

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VL - 37

SP - 1538

EP - 1540

JO - Optics Letters

JF - Optics Letters

IS - 9

ER -

Selective Purcell enhancement of defect emission in ZnO thin films

Abstract

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