Selected Area Manipulation of MoS₂ via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

Engineering

• Nanoscale 100%
• Molybdenum Disulfide 100%
• Etching Process 60%
• Backscattered Electron 40%
• Secondary Electrons 40%
• Subsurface 20%
• Progression 20%
• Field-Effect Transistor 20%
• Current Drain 20%
• Atomic Force Microscopy 20%
• Narrow Channel 20%
• Drain Voltage 20%
• Channel Layer 20%

Material Science

• Photoluminescence 100%
• Transistor 100%
• Atomic Force Microscopy 50%
• Scanning Transmission Electron Microscopy 50%
• Raman Spectroscopy 50%
• Field Effect Transistor 50%
• Point Defect 50%