Abstract
During the magnetically-stabilized liquidencapsulated Czochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The melt is doped with an element in order to vary the electrical and/or optical properties of the crystal. During growth, the so-called melt-depletion flow caused by the opposing relative motions of the encapsulant-melt interface and the crystalmelt interface can be controlled with an externally applied magnetic field. The convective dopant transport during growth driven by this melt motion produces nonuniformities of the dopant concentration in both the melt and the crystal. This paper presents a model for the unsteady transport of a dopant during the MLEC process with an axial magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.
Original language | English |
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Title of host publication | Fluids Engineering |
Publisher | American Society of Mechanical Engineers (ASME) |
Pages | 215-221 |
Number of pages | 7 |
ISBN (Electronic) | 9780791819258 |
DOIs | |
State | Published - 2000 |
Externally published | Yes |
Event | ASME 2000 International Mechanical Engineering Congress and Exposition, IMECE 2000 - Orlando, United States Duration: Nov 5 2000 → Nov 10 2000 |
Publication series
Name | ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE) |
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Volume | 2000-R |
Conference
Conference | ASME 2000 International Mechanical Engineering Congress and Exposition, IMECE 2000 |
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Country/Territory | United States |
City | Orlando |
Period | 11/5/00 → 11/10/00 |
Funding
This work is in part a work of the U.S. Government. ASME disclaims all interest in the U.S. Government's contributions. This research was supported by the National Aeronautics and Space Administration under grant NAG8-1656, by the University of Missouri Research Board, and by the U. S. Air Force Office of Scientific Research.