Search for High-Pressure Silicon Phases: Reaching the Extreme Conditions with High-Intensity Laser Irradiation

Ludovic Rapp, Takeshi Matsuoka, Konstantin L. Firestein, Daisuke Sagae, Hideaki Habara, Keiichiro Mukai, Kazuo A. Tanaka, Eugene Gamaly, Ryosuke Kodama, Yusuke Seto, Takahisa Shobu, Aki Tominaga, Lachlan Smillie, Bianca Haberl, Tatiana Pikuz, Toshinori Yabuuchi, Tadashi Togashi, Yuichi Inubushi, Makina Yabashi, Saulius JuodkazisDmitri V. Golberg, Andrei V. Rode, Norimasa Ozaki

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations

Abstract

Controlling electronic and optical properties of semiconducting materials could substantially expand their functionality and enable new pathways for the formation of ‘smart’ materials for emerging innovative applications. An emerging new path for the synthesis of exotic silicon (Si) polymorphs is irradiation of bulk diamond-cubic Si by ultrashort laser pulses at relativistic intensity above 1019 W/cm2. Exotic polymorphs are formed due to interaction with MeV-energy electrons generated in laser-produced high-temperature plasma state. The unusual Si structures are found in the form of 5-10 nm nanoparticles confined deep in the bulk of 500-μm-thick Si samples. Raman spectroscopy, electron microscopy and X-ray diffraction studies provide an unequivocal evidence of exotic Si phase formation. A key advantage of such relativistic irradiation lies thereby in the fact that large quantities of such exotic Si is synthesised embedded within the bulk diamond-cubic Si and that further the formed Si polymorphs are stable at ambient temperature and pressure. They are thus available for further studies for electronic applications in selective band gap engineering.

Original languageEnglish
Title of host publicationSpringer Series in Optical Sciences
PublisherSpringer Science and Business Media Deutschland GmbH
Pages471-494
Number of pages24
DOIs
StatePublished - 2023

Publication series

NameSpringer Series in Optical Sciences
Volume239
ISSN (Print)0342-4111
ISSN (Electronic)1556-1534

Funding

Acknowledgements This research was supported by the Australian Government through the Australian Research Discovery Project funding scheme (Project DP170100131). K.L.F and D.G are grateful to the Australian Research Council (ARC) for granting the Laureate fund No. FL160100089, to Central Analytical Research Facility of Queensland University of Technology for technical support, and acknowledge the facilities and technical assistance of the Australian Microscopy & Microanalysis Research Facility at the Centre for Microscopy and Microanalysis, The University of Queensland. B. H. was supported by resources at the Spallation Neutron Source and the High Flux Isotope Reactor, DOE Office of Science User Facilities operated by the Oak Ridge National Laboratory (ORNL). The XRD experiments were performed at BL22Xu in SPring-8 with the approval of JAEA (Proposal No. 2018A-E15) and the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal Nos. 2018A3738).

Keywords

  • High-temperature laser-produced plasma
  • Laser-matter interaction at relativistic laser intensity
  • Phase transformation
  • Relativistic electrons
  • Silicon crystal phases

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