Abstract
A new high efficiency, low-bandgap phosphor, ZnSe:Cu,Ce,Cl is described which exhibits a significantly higher quantum gain than conventional x-ray phosphors and more closely matches the spectral sensitivity of silicon sensors. For many imaging applications this phosphor thus promises significantly superior performance compared to conventional phosphors.
Original language | English |
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Pages (from-to) | 119-125 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5198 |
DOIs | |
State | Published - 2004 |
Externally published | Yes |
Event | Hard X-Ray and Gamma-Ray Detector Physics V - San Diego, CA, United States Duration: Aug 4 2003 → Aug 5 2003 |
Keywords
- Phosphor
- X-ray detector
- X-ray imaging