SCHOTTKY BARRIER FORMATION OF Ag ON GaAs(110).

R. Ludeke; T. C. Chiang; T. Miller

doi:10.1116/1.582602

SCHOTTKY BARRIER FORMATION OF Ag ON GaAs(110).

R. Ludeke, T. C. Chiang, T. Miller

STS Project Technical Systems

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Photoemission studies of Ag deposits on cleaved n- and p-type GaAs for coverages from approximately 0. 003 to 20 monolayers indicate clustered Ag growth and undetectable chemical interactions with the substrate. The position of the surface Fermi level changed throughout the deposit range. The data is inconsistent with most of the existing Schottky barrier models. The results are interpreted in terms of donor- and acceptorlike interface states which are characteristic of the clusters but modified by the screening at the interface. Values for Schottky barrier of 0. 89 ev on n-type and 0. 35 ev on p-type material were obtained for the thickest coverage.

Original language	English
Pages (from-to)	581-587
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	3
DOIs	https://doi.org/10.1116/1.582602
State	Published - 1983
Event	Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983

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title = "SCHOTTKY BARRIER FORMATION OF Ag ON GaAs(110).",

abstract = "Photoemission studies of Ag deposits on cleaved n- and p-type GaAs for coverages from approximately 0. 003 to 20 monolayers indicate clustered Ag growth and undetectable chemical interactions with the substrate. The position of the surface Fermi level changed throughout the deposit range. The data is inconsistent with most of the existing Schottky barrier models. The results are interpreted in terms of donor- and acceptorlike interface states which are characteristic of the clusters but modified by the screening at the interface. Values for Schottky barrier of 0. 89 ev on n-type and 0. 35 ev on p-type material were obtained for the thickest coverage.",

author = "R. Ludeke and Chiang, {T. C.} and T. Miller",

year = "1983",

doi = "10.1116/1.582602",

language = "English",

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pages = "581--587",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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note = "Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th ; Conference date: 25-01-1983 Through 27-01-1983",

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TY - JOUR

T1 - SCHOTTKY BARRIER FORMATION OF Ag ON GaAs(110).

AU - Ludeke, R.

AU - Chiang, T. C.

AU - Miller, T.

PY - 1983

Y1 - 1983

N2 - Photoemission studies of Ag deposits on cleaved n- and p-type GaAs for coverages from approximately 0. 003 to 20 monolayers indicate clustered Ag growth and undetectable chemical interactions with the substrate. The position of the surface Fermi level changed throughout the deposit range. The data is inconsistent with most of the existing Schottky barrier models. The results are interpreted in terms of donor- and acceptorlike interface states which are characteristic of the clusters but modified by the screening at the interface. Values for Schottky barrier of 0. 89 ev on n-type and 0. 35 ev on p-type material were obtained for the thickest coverage.

AB - Photoemission studies of Ag deposits on cleaved n- and p-type GaAs for coverages from approximately 0. 003 to 20 monolayers indicate clustered Ag growth and undetectable chemical interactions with the substrate. The position of the surface Fermi level changed throughout the deposit range. The data is inconsistent with most of the existing Schottky barrier models. The results are interpreted in terms of donor- and acceptorlike interface states which are characteristic of the clusters but modified by the screening at the interface. Values for Schottky barrier of 0. 89 ev on n-type and 0. 35 ev on p-type material were obtained for the thickest coverage.

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U2 - 10.1116/1.582602

DO - 10.1116/1.582602

M3 - Conference article

AN - SCOPUS:0020781687

SN - 0734-211X

VL - 1

SP - 581

EP - 587

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th

Y2 - 25 January 1983 through 27 January 1983

ER -

SCHOTTKY BARRIER FORMATION OF Ag ON GaAs(110).

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