Scanning tunneling microscopy investigations of hydrogen plasma-induced electron scattering centers on single-walled carbon nanotubes

The authors report on the generation of localized defects on single-walled carbon nanotubes by means of a hydrogen electron cyclotron resonance plasma. The defects have been investigated using scanning tunneling microscopy (STM) and show an apparent topographic height in the STM of 1-3 Å. In the vicinity of defects, characteristic superstructures could be observed and the patterns could be simulated using a simple model based on large momentum scattering of the valence electrons. The combination of low structural damage and high electronic activity opens the possibility to tune the electronic transport properties using such defects.